X-On Electronics has gained recognition as a prominent supplier of 3DD13003E1D-BD Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 3DD13003E1D-BD Bipolar Transistors - BJT are a product manufactured by Huajing. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

3DD13003E1D-BD Huajing

Name: 3DD13003E1D-BD
Brand: Huajing
SKU: 3DD13003E1DBD_Huajing
Availability: OutOfStock
Rating: 5 (11 reviews)

3DD13003E1D-BD electronic component of Huajing

3DD13003E1D-BD Bipolar Transistors - BJT

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See Product Specifications

Part No.	3DD13003E1D-BD
Manufacturer:	Huajing
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 1.3A 400V TO-92_Forming1 RoHS
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.087 ea
Line Total: USD 0.43

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

3DD13003E1D-BD More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 27 Jun to Wed. 02 Jul MOQ : 5 Multiples : 5	5 : USD 0.087 50 : USD 0.0706 150 : USD 0.0623 500 : USD 0.0562 2000 : USD 0.0513 4000 : USD 0.0488

Specifications

Manufacturer Huajing Huajing
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package TO - 92 FORM in G1 TO - 92 FORM in G1
Brand Category Huajing Huajing
Transistor Type npn npn
Current - Collector Ic Max 1.3 A 1.3 A
Voltage - Collector Emitter Breakdown Max 400 V 400 V
Power - Max 800 mW 800 mW
Collector Cut-Off Current Icbo 100 uA 100 uA
Collector-Emitter Breakdown Voltage Vceo 400 V 400 V
Power Dissipation Pd 800 mW 800 mW
Collector Current Ic 1.3 A 1.3 A
Dc Current Gain Hfe@Ic Vce 15@200 mA , 5V 15@200 mA , 5V
Transition Frequency Ft 5MHz 5MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 400 mV @500 mA , 100 mA 400 mV @500 mA , 100 mA
Operating Temperature + 150 C @ (Tj) + 150 C @ (Tj)

We are delighted to provide the 3DD13003E1D-BD from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 3DD13003E1D-BD and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The 3DD13003E1D-BD transistor manufactured by Huajing is a through-hole NPN type transistor with a rated current of 1.3A, a voltage rating of 400V, and a TO-92_Forming1 RoHS package. It is designed for switching and amplification applications. This transistor is suitable for use in low voltage, high current power switching and high frequency amplifier circuits. Its maximum collector-emitter voltage is 400V and its maximum collector current is 1.3A. This device is RoHS compliant and is suitable for use in industrial, automotive, and home applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAJING may also be referenced as

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