HY3606P HuaYi

HY3606P electronic component of HuaYi
HY3606P HuaYi
HY3606P MOSFETs
HY3606P  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HY3606P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY3606P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HY3606P
Manufacturer: HuaYi
Category: MOSFETs
Description: MOSFET N Trench 60V 162A (Tc) 4V @ 250uA 4.5 mΩ @ 81A,10V TO-220FB-3L RoHS
Datasheet: HY3606P Datasheet (PDF)
Price (USD)
50: USD 0.0159 ea
Line Total: USD 0.8 
Availability : 0
  
QtyUnit Price
50$ 0.0159
500$ 0.0134
1500$ 0.012
4000$ 0.0107
24000$ 0.01
48000$ 0.0098
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HY3606P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY3606P and other electronic components in the MOSFETs category and beyond.

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The HY3606P is a metal–oxide–semiconductor field–effect transistor (MOSFET) produced by HuaYi. It is a N-Trench type device, meaning it is designed to control higher voltages with lower power losses. It supports up to 60 volts of continuous drain-source voltage, and can achieve peak drain–source current of 162 amperes. The thermal resistance junction-case (Tc) is 4 volts at 250 microamperes, while the on–resistance of the MOSFET is very low at 4.5 milliohms at 81 amperes. It has a TO-220FB–3L package for surface mounting, and is compliant with the RoHS standard.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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