HYG170ND03LA1C1 HuaYi

HYG170ND03LA1C1 electronic component of HuaYi
HYG170ND03LA1C1 HuaYi
HYG170ND03LA1C1 MOSFETs
HYG170ND03LA1C1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HYG170ND03LA1C1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG170ND03LA1C1 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. HYG170ND03LA1C1
Manufacturer: HuaYi
Category: MOSFETs
Description: 30V 24A 17.8W 15.6mΩ@10V,6A 1.6V@250uA 36pF@25V 2 N-Channel 354pF@25V 9nC@10V -55℃~+150℃@(Tj) DFN3x3-8L MOSFETs ROHS
Datasheet: HYG170ND03LA1C1 Datasheet (PDF)
Price (USD)
1: USD 0.2066 ea
Line Total: USD 0.21 
Availability : 0
  
QtyUnit Price
1$ 0.2066
10$ 0.202
30$ 0.199
100$ 0.196

Availability 0
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2066
10$ 0.202
30$ 0.199
100$ 0.196

   
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We are delighted to provide the HYG170ND03LA1C1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG170ND03LA1C1 and other electronic components in the MOSFETs category and beyond.

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The HYG170ND03LA1C1 by HuaYi is a MOSFET manufactured with an ROHS-compliant package. It is a dual N-Channel MOSFET that can handle a maximum voltage of 30V and a maximum current of 24A, with a maximum power rating of 17.8W. Its drain-source resistance is 15.6mO at a voltage of 10V and a current of 6A, and its gate threshold voltage is 1.6V at a current of 250uA. It also has a gate-source capacitance of 36pF at a voltage of 25V and a gate-drain capacitance of 354pF at a voltage of 25V. Its reverse transfer capacitance is 9nC at a voltage of 10V, and it is temperature-rated from -55? to +150? (Tj). The part is housed in a DFN3x3-8L package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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