PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET Power MOSFET Features D V 75V (BR)DSS Advanced Process Technology Ultra Low On-Resistance R typ. 3.0m DS(on) 175C Operating Temperature G Fast Switching max. 3.8m Repetitive Avalanche Allowed up to Tjmax S I 180A Lead-Free, RoHS Compliant D (Silicon Limited) Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. GD S Gate Drain Source Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. %& () Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 180 D C GS I T = 100C 120 C Continuous Drain Current, V 10V (Silicon Limited) A D GS I 700 DM Pulsed Drain Current P T = 25C 300 W D C Maximum Power Dissipation Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E AS 160 mJ Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS Single Pulse Avalanche Energy Tested Value 410 I AR See Fig.12a,12b,15,16 A Avalanche Current E mJ AR Repetitive Avalanche Energy T Operating Junction and -55 to + 175 J T C STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC 0.50 Junction-to-Case R 0.50 CS Case-to-Sink, Flat, Greased Surface C/W R JA Junction-to-Ambient 62 R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.066 V/C Reference to 25C, I = 1mA D R SMD DS(on) Static Drain-to-Source On-Resistance V = 10V, I = 110A 3.0 3.8 m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs 94 S V = 25V, I = 110A Forward Transconductance DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 170260 I = 110A g D Q gs Gate-to-Source Charge 55 V = 60V nC DS Q Gate-to-Drain Mille) Charge 66 V = 10V gd GS t d(on) Turn-On Delay Time 21 V = 38V DD t r Rise Time 90 I = 110A D ns t Turn-Off Delay Time 92 = 2.6 d(off) R G t f Fall Time 44 V = 10V GS L D D Internal Drain Inductance Between lead, 4.5 6mm (0.25in.) nH G L Internal Source Inductance from package S 7.5 S and center of die contact C Input Capacitance 7580 V = 0V iss GS C oss Output Capacitance 970 V = 25V DS C rss Reverse Transfer Capacitance 540 = 1.0MHz, See Fig. 5 pF C Output Capacitance 3750 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 650 V = 0V, V = 60V, = 1.0MHz GS DS C eff. oss 1110 V = 0V, V = 0V to 60V Effective Output Capacitance GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 160 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 700 S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 110A, V = 0V SD 1.3 V J S GS t T = 25C, I = 110A, V = 38V Reverse Recovery Time 35 53 ns rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 40 60 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by This value determined from sample failure population starting T = 25C, L=0.026mH, R = 25 , I = 110A, V =10V. max. junction temperature. (See fig. 11). GS J G AS 2 This is applied to D Pak, when mounted on 1 square PCB Limited by T , starting T = 25C, Jmax J ( FR-4 or G-10 Material ). For recommended footprint and L=0.026mH, R = 25 , I = 110A, V =10V. GS G AS soldering techniques refer to application note AN-994. Part not recommended for use above this value. Pulse width 1.0ms duty cycle 2%. R is measured at T of approximately 90C. J C eff. is a fixed capacitance that gives the same oss Solder mounted on IMS substrate. charging time as C while V is rising from 0 to 80% oss DS V . DSS 2 www.irf.com