AUTOMOTIVE GRADE AUIRF3004WL HEXFET Power MOSFET Features Advanced Process Technology D V 40V (BR)DSS Ultra Low On-Resistance R typ. 1.27m DS(on) 50% Lower Lead Resistance max. 1.40m 175C Operating Temperature G Fast Switching I 386A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax S I 240A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically design for automotive applications this Widelead TO- 262 package part has the advantage of having over 50% lower lead resistance and delivering over 20% lower Rds(on) when compared with a traditional TO-262 package housing the same silicon die. This greatly helps in reducing condition losses, achieving higher current levels or enabling a system to run cooler and have improved efficiency. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive and other applications. GD S Gate Drain Source Absolute Maximum Ratings functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % & ()* Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 386 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 273 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I 1544 DM Pulsed Drain Current P T = 25C W Maximum Power Dissipation 375 D C Linear Derating Factor 2.5 W/C V 20 V Gate-to-Source Voltage GS Single Pulse Avalanche Energy E 470 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR 6.1 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T C STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.40 C/W JC HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.038 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.27 1.40 V = 10V, I = 195A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A GS(th) DS GS D gfs Forward Transconductance 330 S V = 10V, I = 195A DS D R Internal Gate Resistance 2.7 G I Drain-to-Source Leakage Current 20 V = 40V, V = 0V DSS DS GS A 250 V = 32V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 140 210 I = 232A g D Q Gate-to-Source Charge 53 V =20V gs DS nC Q Gate-to-Drain Mille) Charge 49 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 91 I = 232A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 19 V = 26V d(on) DD t Rise Time 220 I = 232A r D ns t Turn-Off Delay Time 90 R = 2.7 d(off) G t Fall Time 130 V = 10V f GS C Input Capacitance 9450 V = 0V iss GS C Output Capacitance 1930 V = 32V oss DS C Reverse Transfer Capacitance 975 pF = 1.0MHz, See Fig.5 rss C eff. (ER) 2330 V = 0V, V = 0V to 32V , See Fig.11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 2815 V = 0V, V = 0V to 32V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 386 (Body Diode) showing the A G I Pulsed Source Current 1544 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t Reverse Recovery Time 41 62 T = 25C V = 34V, rr J R ns T = 125C I = 232A 51 77 J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 62 93 rr J nC 99 149 T = 125C J I Reverse Recovery Current 2.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 232A, di/dt 907A/s, V V , T 175C. SD DD (BR)DSS J temperature. Package limitation current is 240A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as