AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V 55V (BR)DSS 175C Operating Temperature Fast Switching R max. 8.0m DS(on) Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax I 140A D Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this cellular S D design of HEXFET Power MOSFETs utilizes the latest G processing techniques to achieve low on-resistance per silicon TO-220AB area. This benefit combined with the fast switching speed and AUIRF3305 ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient G D S and reliable device for use in Automotive and a wide variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF3305 TO-220 Tube 50 AUIRF3305 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 140 D C GS I T = 100C Continuous Drain Current, V 10V 99 A D C GS I Pulsed Drain Current 560 DM P T = 25C Maximum Power Dissipation 330 W D C Linear Derating Factor 2.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 470 AS mJ E (Tested) Single Pulse Avalanche Energy (Tested Value) 860 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.45 R JC Case-to-Sink, Flat, Greased Surface 0.50 R C/W CS R Junction-to-Ambient 62 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2019-12-03 AUIRF3305 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.055 V/C Reference to 25C, I = 1mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 8.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 41 S V = 25V, I = 75A DS D 25 V = 55 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 100 150 I = 75A g D Q Gate-to-Source Charge 21 nC V = 44V gs DS Q Gate-to-Drain Charge 45 V = 10V gd GS t Turn-On Delay Time 16 V = 28V d(on) DD t Rise Time 88 I = 75A r D ns t Turn-Off Delay Time 43 R = 2.6 d(off) G t Fall Time 34 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 3650 V = 0V iss GS C Output Capacitance 1230 V = 25V oss DS C Reverse Transfer Capacitance 450 = 1.0MHz rss pF C Output Capacitance 4720 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 930 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 1490 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 560 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS t Reverse Recovery Time 57 86 ns T = 25C ,I = 75A, V = 28V rr J F DD Q Reverse Recovery Charge 130 190 nC di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T , starting T = 25C, L = 0.17mH, R = 25, I = 75A, V =10V. Part not recommended for use above this value. Jmax J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. 100% tested to this value in production. R is measured at T of approximately 90C. J All AC and DC test conditions based on former package limited current of 75A. 2 2019-12-03