PD - 96319 AUTOMOTIVE GRADE AUIRF3805 AUIRF3805S AUIRF3805L Features HEXFET Power MOSFET Advanced Process Technology V 55V (BR)DSS D Ultra Low On-Resistance R typ. 2.6m DS(on) 175C Operating Temperature Fast Switching max. 3.3m G Repetitive Avalanche Allowed up to Tjmax I 210A D (Silicon Limited) Lead-Free, RoHS Compliant S Automotive Qualified * I 160A D (Package Limited) D D D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per S D S S silicon area. Additional features of this design are a 175C D G D G junction operating temperature, fast switching speed and G improved repetitive avalanche rating. These features 2 TO-220AB D Pak TO-262 combine to make this design an extremely efficient and AUIRF3805 AUIRF3805S AUIRF3805L reliable device for use in Automotive applications and a wide variety of other applications. GD S Absolute Maximum Ratings Gate Drain Source functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. % % & && ) *+,- & Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) 210 I T = 25C GS D C Continuous Drain Current, V 10V (Silicon Limited) 150 I T = 100C GS D C A Continuous Drain Current, V 10V (Package limited) 160 I T = 25C GS D C 890 I Pulsed Drain Current DM 300 P T = 25C Power Dissipation W D C 2.0 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS E 650 Single Pulse Avalanche Energy (Thermally limited) AS mJ E (Tested ) 940 AS Single Pulse Avalanche Energy Tested Value I See Fig.12a, 12b, 15, 16 Avalanche Current A AR E Repetitive Avalanche Energy mJ AR -55 to + 175 T Operating Junction and J C T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.5 JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount) 40 JA HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.051 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 2.6 3.3 V = 10V, I = 75A ** GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 75 V V = 25V, I = 75A ** DS D I DSS Drain-to-Source Leakage Current 20 V = 55V, V = 0V DS GS A 250 V = 55V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q g Total Gate Charge 190 290 I = 75A ** D Q gs Gate-to-Source Charge 52 nC V = 44V DS Q Gate-to-Drain Mille) Charge 72 V = 10V gd GS t d(on) Turn-On Delay Time 150 V = 28V DD t r Rise Time 20 I = 75A** D ns t d(off) Turn-Off Delay Time 93 R = 2.6 G t Fall Time 87 V = 10V f GS D L Internal Drain Inductance Between lead, D 4.5 6mm (0.25in.) nH G L S Internal Source Inductance from package 7.5 S and center of die contact C Input Capacitance 7960 V = 0V iss GS C Output Capacitance 1260 V = 25V oss DS C rss Reverse Transfer Capacitance 630 = 1.0MHz pF C oss Output Capacitance 4400 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 980 V = 0V, V = 44V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 1550 V = 0V, V = 0V to 44V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S 210 (Body Diode) showing the A I Pulsed Source Current integral reverse SM 890 (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A** , V = 0V SD J S GS t Reverse Recovery Time 36 54 ns T = 25C, I = 75A** , V = 28V rr DD J F di/dt = 100A/s Q Reverse Recovery Charge 47 71 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Note through ,, are on page 3 2 www.irf.com