AUTOMOTIVE GRADE
AUIRF5210S
Features
Advanced Process Technology
V -100V
DSS
P-Channel MOSFET
Ultra Low On-Resistance
R max.
60m
DS(on)
Dynamic dv/dt Rating
Fast Switching
I -38A
D
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
D
Lead-Free, RoHS Compliant
Automotive Qualified *
S
G
Description
2
Specifically designed for Automotive applications, this cellular
D Pak
AUIRF5210S
design of HEXFET Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and G D S
ruggedized device design that HEXFET power MOSFETs are
Gate Drain Source
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications..
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
Tube 50 AUIRF5210S
2
AUIRF5210S D -Pak
Tape and Reel Left 800 AUIRF5210STRL
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless
otherwise specified.
Symbol Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ -10V -38
D C GS
I @ T = 100C Continuous Drain Current, V @ -10V -24 A
D C GS
I Pulsed Drain Current -140
DM
P @T = 25C Maximum Power Dissipation 3.1
D A
W
P @T = 25C Maximum Power Dissipation 170
D C
Linear Derating Factor 1.3 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy (Thermally Limited) 120
AS mJ
I Avalanche Current -23 A
AR
E Repetitive Avalanche Energy 17 mJ
AR
dv/dt Peak Diode Recovery dv./dt -7.4 V/ns
T Operating Junction and -55 to + 150
J
T Storage Temperature Range
C
STG
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Thermal Resistance
Symbol Parameter Typ. Max. Units
Junction-to-Case 0.75
R
JC
C/W
R Junction-to-Ambient ( PCB Mount, steady state) 40
JA
HEXFET is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2019-10-15
AUIRF5210S
Static @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -250A
(BR)DSS GS D
Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, I = -1mA
V /T
(BR)DSS J D
R Static Drain-to-Source On-Resistance 60 m V = -10V, I = -38A
DS(on) GS D
V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A
GS(th) DS GS D
gfs Forward Trans conductance 9.5 S V = -50V, I = -23A
DS D
-50 V = -100V, V = 0V
DS GS
I Drain-to-Source Leakage Current A
DSS
-250 V = -80V,V = 0V,T =125C
DS GS J
Gate-to-Source Forward Leakage -100 V = -20V
GS
I nA
GSS
Gate-to-Source Reverse Leakage 100 V = 20V
GS
Dynamic Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Q Total Gate Charge 150 230 I = -23A
g D
Q Gate-to-Source Charge 22 33 nC V = -80V
gs DS
Q Gate-to-Drain Charge 81 120 V = -10V
gd GS
t Turn-On Delay Time 14 V = -50V
d(on) DD
t Rise Time 63 I = -23A
r D
ns
t Turn-Off Delay Time 72 R = 2.4
d(off) G
V = -10V
t Fall Time 55
f GS
Between lead,
L Internal Drain Inductance 4.5
D
6mm (0.25in.)
nH
from package
L Internal Source Inductance 7.5
S
and center of die contact
C Input Capacitance 2780
V = 0V
iss GS
pF
C Output Capacitance 800 V = -25V
oss DS
= 1.0MHz, See Fig. 5
C Reverse Transfer Capacitance 430
rss
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
I -38
S
(Body Diode) showing the
A
integral reverse
Pulsed Source Current
I -140
SM
(Body Diode) p-n junction diode.
V Diode Forward Voltage -1.6 V T = 25C,I = -23A,V = 0V
SD J S GS
t Reverse Recovery Time 170 260 ns T = 25C ,I = -23A, V = -25V
rr J F DD
Q Reverse Recovery Charge 1180 1770 nC di/dt = -100A/s
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L )
S D
on
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T , starting T = 25C, L = 0.46mH, R = 25, I = -23A.(See Fig.12)
Jmax J G AS
I -23A, di/dt -650A/s, V V , T 150C.
SD DD (BR)DSS J
Pulse width 300s; duty cycle 2%.
2
This is applied to D Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R is measured at T of approximately 90C.
J
2 2019-10-15