AUTOMOTIVE GRADE AUIRF7675M2TR Automotive DirectFET Power MOSFET Advanced Process Technology V 150V (BR)DSS Optimized for Class D Audio Amplifier Applications Low Rds(on) for Improved Efficiency R typ. 47m DS(on) Low Qg for Better THD and Improved Efficiency max. 56m Low Qrr for Better THD and Lower EMI R 1.2 g (typical) Low Parasitic Inductance for Reduced Ringing and Lower EMI Q 21nC Delivers up to 250W per Channel into 4 with No Heat sink g (typical) Dual Sided Cooling 175C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability S Lead free, RoHS and Halogen free DD S G Automotive Qualified * M2 DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems. Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRF7675M2 DirectFET Medium Can AUIRF7675M2TR Tape and Reel 4800 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units V Drain-to-Source Voltage 150 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 18 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 13 D C GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 4.4 A D A GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 90 D C GS I Pulsed Drain Current 72 DM P T = 25C Power Dissipation 45 D C W P T = 25C Power Dissipation 2.7 D A E Single Pulse Avalanche Energy (Thermally Limited) 59 AS mJ E (Tested) Single Pulse Avalanche Energy 170 AS A I Avalanche Current AR See Fig. 16, 17, 18a, 18b E Repetitive Avalanche Energy mJ AR T Peak Soldering Temperature 270 P C T Operating Junction and -55 to + 175 J T Storage Temperature Range STG HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-14 AUIRF7675M2TR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Ambient 60 R JA Junction-to-Ambient 12.5 R JA Junction-to-Ambient 20 R C/W JA Junction-to-Can 3.3 R J-Can R Junction-to-PCB Mounted 1.4 J-PCB Linear Derating Factor 0.3 W/C Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.16 V/C Reference to 25C, I = 1.0mA V / T D (BR)DSS J 47 56 V = 10V, I = 11A R Static Drain-to-Source On-Resistance m GS D DS(on) V Gate Threshold Voltage 3.0 4.0 5.0 V GS(th) V = V , I = 100A DS GS D V / T Gate Threshold Voltage Coefficient -11 mV/C GS(th) J gfs Forward Transconductance 16 S V = 50V, I = 11A DS D R Internal Gate Resistance 1.2 5.0 G 20 V = 150V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 150V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 21 32 V = 75V g DS Q Gate-to-Source Charge 5.2 V = 10V GS gs1 I = 11A Q Gate-to-Source Charge 1.6 gs2 D nC Q Gate-to-Drain Mille) Charge 7.1 See Fig. 6 and 17 gd Q Gate Charge Overdrive 7.1 godr Q Switch Charge (Q + Q) 8.7 sw gs2 gd Q Output Charge 8.8 V = 16V, V = 0V oss nC DS GS t Turn-On Delay Time 10 V = 75V, V = 10V d(on) DD GS t Rise Time 13 I = 11A r D ns t Turn-Off Delay Time 14 R = 6.8 d(off) G t Fall Time 7.5 f C Input Capacitance 1360 V = 0V iss GS C Output Capacitance 190 V = 25V DS oss C Reverse Transfer Capacitance 41 = 1.0 MHz rss pF C Output Capacitance 1210 V = 0V, V = 1.0V, = 1.0 MHz oss GS DS C Output Capacitance 92 V = 0V, V =120V, = 1.0MHz oss GS DS Notes through are on page 3 2 2015-12-14