AUTOMOTIVE GRADE AUIRFN8403 Features HEXFET POWER MOSFET Advanced Process Technology Ultra Low On-Resistance V 40V DSS 175C Operating Temperature R typ. DS(on) 2.5m Fast Switching Repetitive Avalanche Allowed up to Tjmax max 3.3m Lead-Free, RoHS Compliant I 123A D (Silicon Limited) Automotive Qualified * I 95A D (Package Limited) Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of PQFN 5X6 mm other applications. Applications G D S Electric Power Steering (EPS) Gate Drain Source Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Converter Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity AUIRFN8403 PQFN 5mm x 6mm Tape and Reel 4000 AUIRFN8403TR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 123 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 87 D C(Bottom) GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 95 D C GS I Pulsed Drain Current 492 DM P T = 25C Power Dissipation 4.3 D A W P T = 25C Power Dissipation 94 D C(Bottom) Linear Derating Factor 0.029 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 100 mJ AS E (Tested) Single Pulse Avalanche Energy 159 AS A I Avalanche Current See Fig. 14, 15, 22a, 22b AR E Repetitive Avalanche Energy AR T Operating Junction and -55 to + 175 J C Storage Temperature Range T STG HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at AUIRFN8403 Thermal Resistance Symbol Parameter Typ. Max. Units R (Bottom) Junction-to-Case 1.6 JC Junction-to-Case 31 R (Top) JC C/W R Junction-to-Ambient 35 JA Junction-to-Ambient 23 R (<10s) JA Static Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 26 mV/C Reference to 25C, I = 2.0mA V /T (BR)DSS J D R Static Drain-to-Source On-Resistance 2.5 3.3 V = 10V, I = 50A m GS D DS(on) V Gate Threshold Voltage 2.6 3.9 V V = V , I = 100A GS(th) DS GS D 1.0 V = 40V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.5 G Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 159 S V = 10V, I = 50A DS D Q Total Gate Charge 65 98 I = 50A g D Q Gate-to-Source Charge 16 V = 20V gs DS nC Q Gate-to-Drain Mille) Charge 23 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 42 sync g gd t Turn-On Delay Time 11 V = 20V d(on) DD t Rise Time 37 I = 30A D r ns t Turn-Off Delay Time 33 R = 2.7 d(off) G t Fall Time 26 V = 10V f GS C Input Capacitance 3174 V = 0V iss GS V = 25V C Output Capacitance 479 oss DS C Reverse Transfer Capacitance 332 pF = 1.0 MHz rss C eff. (ER) Effective Output Capacitance (Energy Related) 637 V = 0V, V = 0V to 32V oss GS DS C eff. (TR) Effective Output Capacitance (Time Related) 656 V = 0V, V = 0V to 32V oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current 123 MOSFET symbol I A S (Body Diode) showing the Pulsed Source Current 492 integral reverse I A SM (Body Diode) p-n junction diode. V Diode Forward Voltage 0.9 1.3 V T = 25C, I = 50A, V = 0V SD J S GS dv/dt Peak Diode Recovery 2.4 V/ns T = 175C, I = 50A, V = 40V J S DS 16 T = 25C J V = 34V, R t Reverse Recovery Time ns rr 18 T = 125C J I = 50A F 5.0 T = 25C J di/dt = 100A/s Q Reverse Recovery Charge nC rr 6.9 T = 125C J I Reverse Recovery Current 0.50 A T = 25C RRM J 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback September 1, 2015