PD - 97550 AUIRFP2907Z AUTOMOTIVE GRADE HEXFET Power MOSFET D Features V 75V (BR)DSS Advanced Process Technology Ultra Low On-Resistance R max. 4.5m DS(on) G 175C Operating Temperature Fast Switching I 170A D S Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest pro- cessing techniques to achieve extremely low on- S D resistance per silicon area. Additional features of this G design are a 175C junction operating temperature, fast switching speed and improved repetitive ava- TO-247AC lanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of GD S other applications. Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 170 A C D GS I T = 100C 120 C Continuous Drain Current, V 10V D GS I 680 DM Pulsed Drain Current P T = 25C 310 W C Maximum Power Dissipation D Linear Derating Factor 2.0 W/C V 20 V GS Gate-to-Source Voltage E 520 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS 690 Single Pulse Avalanche Energy Tested Value I See Fig.12a,12b,15,16 A AR Avalanche Current E AR Repetitive Avalanche Energy mJ T -55 to + 175 C J Operating Junction and T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case ) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC 0.49 C/W Junction-to-Case R 0.24 CS Case-to-Sink, Flat, Greased Surface R JA 40 Junction-to-Ambient HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage75 V V = 0V, I = 250A (BR)DSS GS D V / T DSS J Breakdown Voltage Temp. Coefficient 0.069 V/C Reference to 25C, I = 1mA D R DS(on) Static Drain-to-Source On-Resistance 3.5 4.5 V = 10V, I = 90A m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Transconductance 180 S V = 25V, I = 90A DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 180270 I = 90A D Q Gate-to-Source Charge 46 nC V = 60V gs DS Q gd Gate-to-Drain Mille) Charge 65 V = 10V GS t d(on) Turn-On Delay Time 19 ns V = 38V DD t Rise Time 140 I = 90A r D t d(off) Turn-Off Delay Time 97 R = 2.5 G t Fall Time 100 V = 10V f GS L D Internal Drain Inductance 5.0 nH Between lead, D 6mm (0.25in.) G L Internal Source Inductance 13 from package S S and center of die contact C iss Input Capacitance 7500 pF V = 0V GS C Output Capacitance 970 V = 25V oss DS C rss Reverse Transfer Capacitance 510 = 1.0MHz, See Fig. 5 C oss Output Capacitance 3640 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 650 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 1020 V = 0V, V = 0V to 60V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 90 MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 680 integral reverse (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 90A, V = 0V SD 1.3 V J S GS t T = 25C, I = 90A, V = 38V rr Reverse Recovery Time 41 61 ns DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 59 89 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same oss max. junction temperature. (See fig. 11). charging time as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax L=0.13mH, R = 25 , I = 90A, V =10V. GS G AS avalanche performance. Part not recommended for use above this value. This value determined from sample failure population, I 90A, di/dt 340A/s, V V , SD DD (BR)DSS starting T = 25C, L=0.13mH, R = 25 , I = 90A, V =10V. J G AS GS T 175C. J R is measured at Pulse width 1.0ms duty cycle 2%. 2 www.irf.com