AUIRFR540Z AUTOMOTIVE GRADE AUIRFU540Z HEXFET Power MOSFET Application V 100V DSS Automatic Voltage Regulator (AVR) R typ. 22.5m Solenoid Injection DS(on) Body Control max. 28.5m Low Power Automotive Applications I 35A D D D Description Specifically designed for Automotive applications, this HEXFET S Power MOSFET utilizes the latest processing techniques to S G D achieve extremely low on-resistance per silicon area. Additional G features of this design are a 175C junction operating temperature, D-Pak I-Pak fast switching speed and improved repetitive avalanche rating . AUIRFR540Z AUIRFU540Z These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFU540Z I-Pak Tube 75 AUIRFU540Z Tube 75 AUIRFR540Z AUIRFR540Z D-Pak Tape and Reel Left 3000 AUIRFR540ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 35 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 25 D C GS A I Pulsed Drain Current 140 DM P T = 25C Maximum Power Dissipation 91 W D C Linear Derating Factor 0.61 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 39 AS mJ E (Tested) Single Pulse Avalanche Energy Tested Value 75 AS I Avalanche Current A AR See Fig.15,16, 12a, 12b E Repetitive Avalanche Energy mJ AR T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.64 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-03 AUIRFR/U540Z Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.092 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 22.5 28.5 m V = 10V, I = 21A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D gfs Forward Trans conductance 28 S V = 25V, I = 21A DS D 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 39 59 I = 21A g D Q Gate-to-Source Charge 11 nC V = 50V gs DS Q Gate-to-Drain Charge 12 V = 10V gd GS t Turn-On Delay Time 14 V = 50V d(on) DD t Rise Time 42 I = 21A r D ns t Turn-Off Delay Time 43 R = 13 d(off) G t Fall Time 34 V = 10V f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 1690 V = 0V iss GS C Output Capacitance 180 V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz rss pF C Output Capacitance 720 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 110 V = 0V, V = 80V = 1.0MHz oss GS DS C Effective Output Capacitance 190 V = 0V, V = 0V to 80V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 35 S (Body Diode) showing the A Pulsed Source Current integral reverse I 140 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 21A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C ,I = 21A, V = 50V rr J F DD Q Reverse Recovery Charge 40 60 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11) Limited by T starting T = 25C, L = 0.17mH, R = 25 , I = 21A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population, 100% tested to this value in production. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2017-10-03