AUTOMOTIVE GRADE AUIRFS4310Z HEXFET Power MOSFET Features V 100V DSS Advanced Process Technology R typ. 4.8m DS(on) Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175C Operating Temperature I 127A D (Silicon Limited) Fast Switching I 120A D (Package Limited) Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Automotive Qualified * Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to achieve 2 extremely low on-resistance per silicon area. Additional features of D -Pak this design are 175C junction operating temperature, fast switching AUIRFS4310Z speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable G D S device for use in Automotive applications and a wide variety of other Gate Drain Source applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 AUIRFS4310Z 2 AUIRFS4310Z D -Pak Tape and Reel Left 800 AUIRFS4310ZTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 127 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 90 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 120 D C GS I Pulsed Drain Current 560 DM P T = 25C Maximum Power Dissipation 250 W D C Linear Derating Factor 1.7 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 130 mJ AS I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 18 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.6 R JC C/W 2 Junction-to-Ambient (PCB Mount), D Pak 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-12 AUIRFS4310Z Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 4.8 6.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150A GS(th) DS GS D gfs Forward Trans conductance 150 S V = 50V, I = 75A DS D R Gate Resistance 0.7 G 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 80V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 120 170 I = 75A g D Q Gate-to-Source Charge 29 V = 50V gs DS nC Q Gate-to-Drain Charge 35 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 85 sync g gd t Turn-On Delay Time 20 V = 65V d(on) DD t Rise Time 60 I = 75A r D ns t Turn-Off Delay Time 55 R = 2.7 d(off) G t Fall Time 57 V = 10V f GS C Input Capacitance 6860 = 0V V iss GS C Output Capacitance 490 V = 50V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 570 V = 0V, V = 0V to 80V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 920 V = 0V, V = 0V to 80V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 127 S (Body Diode) showing the A Pulsed Source Current integral reverse I 560 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS 40 T = 25C V = 85V J DD t Reverse Recovery Time ns rr 49 T = 125C I = 75A, J F 58 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 89 T = 125C J T = 25C I Reverse Recovery Current 2.5 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.047mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 75A, di/dt 600A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2017-10-12