PD - 97732 AUTOMOTIVE GRADE AUIRFZ48N HEXFET Power MOSFET Features D V 55V (BR)DSS R typ. 11m DS(on) G max 14m % S I 69A D & ( )% * + , D Description Specifically designed for Automotive applications, this S Stripe Planar design of HEXFET Power MOSFETs uti- D G lizes the latest processing techniques to achieve low on- resistance per silicon area. This benefit combined with TO-220AB AUIRFZ48N the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro- G D S vides the designer with an extremely efficient and reli- Gate Drain Source able device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise A specified. Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 69 D C GS I T = 100C Continuous Drain Current, V 10V 49 A D C GS I 270 Pulsed Drain Current DM P T = 25C Power Dissipation 160 W D C 1.1 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS E 265 Single Pulse Avalanche Energy (Thermally Limited) AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 290 AS I Avalanche Current See Fig.12a, 12b, 15, 16 AR A E Repetitive Avalanche Energy mJ AR T -55 to + 175 Operating Junction and J T Storage Temperature Range C STG 300 (1.6mm from case ) Soldering Temperature, for 10 seconds 10 lbf in (1.1N m) Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 0.95 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS RJunction-to-Ambient 62 JA www.irf.com 1 10/3/11 Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250 A GS D (BR)DSS Reference to 25C, I = 1.0mA V /T Breakdown Voltage Temp. Coefficient 0.054 V/C D (BR)DSS J V = 10V, I = 40A R Static Drain-to-Source On-Resistance 11 14 m GS D DS(on) V V = V , I = 100 A Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D V = 10V, I = 40A gfs Forward Transconductance 24 S DS D I V = 55V, V = 0V Drain-to-Source Leakage Current 25 A DSS DS GS V = 55V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q I = 40A Total Gate Charge 42 63 g D V = 44V Q Gate-to-Source Charge 9.0 nC gs DS V = 10V Q Gate-to-Drain Mille) Charge 17 GS gd t V = 28V Turn-On Delay Time 12 d(on) DD I = 40A t Rise Time 62 D r t R = 7.6 Turn-Off Delay Time 37 ns d(off) G V = 10V t Fall Time 37 GS f D L Internal Drain Inductance 4.5 Between lead, D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact V = 0V C Input Capacitance 1900 GS iss C V = 25V Output Capacitance 470 oss DS C Reverse Transfer Capacitance 120 pF = 1.0MHz rss C Output Capacitance 2180 V = 0V, V = 1.0V, = 1.0MHz GS DS oss C V = 0V, V = 44V, = 1.0MHz Output Capacitance 340 oss GS DS V = 0V, V = 0V to 44V C eff. Effective Output Capacitance 610 GS DS oss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 69 S (Body Diode) A showing the I integral reverse Pulsed Source Current 270 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 40A, V = 0V J S GS SD t T = 25C, I = 40A, V = 28V Reverse Recovery Time 71 110 ns rr J F DD Q Reverse Recovery Charge 230 345 nC di/dt = 100A/ s rr t Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Forward Turn-On Time on Repetitive rating pulse width limited by Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax max. junction temperature. (See fig. 11). avalanche performance. Limited by T , starting T = 25C, L = 0.24mH Jmax J This value determined from sample failure population, starting R = 50 , I = 40A, V =10V. Part not G AS GS T = 25C, L = 0.24mH, R = 50, I = 40A, V =10V. J G AS GS recommended for use above this value. Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the oss same charging time as C while V is rising oss DS from 0 to 80% V . DSS 2 www.irf.com