PD - 97612A AUTOMOTIVE GRADE AUIRFZ48Z AUIRFZ48ZS Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175C Operating Temperature V 55V (BR)DSS Fast Switching Repetitive Avalanche Allowed up R max. 11m DS(on) G to Tjmax Lead-Free, RoHS Compliant I 61A S D Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest D D processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating S S D D temperature, fast switching speed and improved G G repetitive avalanche rating . These features com- 2 bine to make this design an extremely efficient and D Pak TO-220AB reliable device for use in Automotive applications AUIRFZ48ZS AUIRFZ48Z and a wide variety of other applications. G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 61 A C D GS I T = 100C 43 C Continuous Drain Current, V 10V D GS I 240 DM Pulsed Drain Current P T = 25C 91 W C Maximum Power Dissipation D Linear Derating Factor 0.61 W/C V 20 V Gate-to-Source Voltage GS E 73 mJ AS Single Pulse Avalanche Energy (Thermally Limited) E (tested) AS 120 Single Pulse Avalanche Energy Tested Value I See Fig.12a,12b,15,16 A AR Avalanche Current E AR Repetitive Avalanche Energy mJ Peak Diode Recovery dv/dt dv/dt 7.2 V/ns T -55 to + 175 C Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case ) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 1.64 C/W R CS 0.50 Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at Static Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA DSS J D R DS(on) Static Drain-to-Source On-Resistance 8.6 11 m V = 10V, I = 37A GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250 A DS GS D gfs Forward Transconductance 24 S V = 25V, I = 37A DS D I DSS Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge 43 64 nC I = 37A g D Q gs Gate-to-Source Charge 11 16 V = 44V DS Q Gate-to-Drain Mille) Charge 16 24 V = 10V gd GS t Turn-On Delay Time 15 ns V = 28V d(on) DD t Rise Time 69 I = 37A r D t d(off) Turn-Off Delay Time 35 R = 12 G t f Fall Time 39 V = 10V GS D L D Internal Drain Inductance 4.5 nH Between lead, 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C Input Capacitance 1720 pF V = 0V iss GS C Output Capacitance 300 = 25V oss V DS C Reverse Transfer Capacitance 160 = 1.0MHz, See Fig. 5 rss C oss Output Capacitance 1020 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 230 V = 0V, V = 44V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 380 V = 0V, V = 0V to 44V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 61 MOSFET symbol (Body Diode) A showing the G I SM Pulsed Source Current 240 integral reverse S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 37A, V = 0V SD 1.3 V J S GS t Reverse Recovery Time T = 25C, I = 37A, V = 30V rr DD 20 31 ns J F Q di/dt = 100A/ s rr Reverse Recovery Charge 13 20 nC t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by C eff. is a fixed capacitance that gives the same charging time oss max. junction temperature. (See fig. 11). as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L =0.11mH, Jmax J Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax R = 25, I = 37A, V =10V. Part not G AS GS avalanche performance. recommended for use above this value. This value determined from sample failure population, I 37A, di/dt 920A/s, V V , SD DD (BR)DSS starting T = 25C, L =0.11mH, R = 25, I = 37A, V =10V. J G AS GS T 175C. J 2 This is applied to D Pak, when mounted on 1 square PCB Pulse width 1.0ms duty cycle 2%. ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994. R is rated at T of approximately 90C. J 2 www.irf.com