AUIRL3705Z AUIRL3705ZS AUTOMOTIVE GRADE AUIRL3705ZL HEXFET Power MOSFET Features V 55V Logic Level DSS Advanced Process Technology R typ. 6.5m DS(on) Ultra Low On-Resistance max. 8.0m 175C Operating Temperature I 86A D (Silicon Limited) Fast Switching I 75A Repetitive Avalanche Allowed up to Tjmax D (Package Limited) Lead-Free, RoHS Compliant D D Automotive Qualified * Description S S Specifically designed for Automotive applications, this HEXFET Power S D D G MOSFET utilizes the latest processing techniques to achieve extremely low G G on-resistance per silicon area. Additional features of this design are a 175C 2 TO-220AB TO-262 D Pak junction operating temperature, fast switching speed and improved repetitive AUIRL3705Z AUIRL3705ZL AUIRL3705ZS avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide G D S variety of other applications. Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL Tube 50 AUIRL3705ZS 2 AUIRL3705ZS D -Pak Tape and Reel Left 800 AUIRL3705ZSTRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 86 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 61 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS I Pulsed Drain Current 340 DM P T = 25C Maximum Power Dissipation 130 W D C Linear Derating Factor 0.88 W/C V Gate-to-Source Voltage 16 V GS E Single Pulse Avalanche Energy (Thermally Limited) 120 AS mJ E (tested) Single Pulse Avalanche Energy Tested Value 180 AS I Avalanche Current See Fig.15,16, 12a, 12b A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.14 JC Case-to-Sink, Flat, Greased Surface 0.50 R CS C/W Junction-to-Ambient 62 R JA R Junction-to-Ambient ( PCB Mount, steady state) 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRL3705Z/S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.055 V/C Reference to 25C, I = 1mA D (BR)DSS J 6.5 8.0 V = 10V, I = 52A GS D R Static Drain-to-Source On-Resistance 11 mV = 5.0V, I = 43A DS(on) GS D 12 VGS = 4.5V, ID = 30A V Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 150 S V = 25V, I = 52A DS D 20 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 55V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 16V I GSS GS nA Gate-to-Source Reverse Leakage -200 V = -16V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 40 60 I = 43A g D Q Gate-to-Source Charge 12 nC V = 44V gs DS Q Gate-to-Drain Charge 21 V = 5.0V gd GS t Turn-On Delay Time 17 V = 28V d(on) DD t Rise Time 240 I = 43A r D ns t Turn-Off Delay Time 26 R = 4.3 d(off) G V = 5.0V t Fall Time 83 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2880 V = 0V iss GS C Output Capacitance 420 V = 25V oss DS C Reverse Transfer Capacitance 220 = 1.0MHz rss pF C Output Capacitance 1500 V = 0V, V = 1.0V = 1.0MHz oss GS DS C Output Capacitance 330 V = 0V, V = 44V = 1.0MHz oss GS DS C Effective Output Capacitance 510 V = 0V, V = 0V to 44V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 75 S (Body Diode) showing the A Pulsed Source Current integral reverse I 340 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 52A,V = 0V SD J S GS t Reverse Recovery Time 16 24 ns T = 25C ,I = 43A , V = 28V rr J F DD Q Reverse Recovery Charge 7.4 11 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig.11) Limited by T starting T = 25C, L = 0.09mH, R = 25 , I = 52A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population 100% tested to this value in production. This is only applied to TO-220AB package. 2 This is applied to D Pak, When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T of approximately 90C J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2015-10-29