X-On Electronics has gained recognition as a prominent supplier of BC847CE6327HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847CE6327HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847CE6327HTSA1 Infineon

BC847CE6327HTSA1 electronic component of Infineon
BC847CE6327HTSA1 Infineon
BC847CE6327HTSA1 Bipolar Transistors - BJT
BC847CE6327HTSA1  Semiconductors

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See Product Specifications
Part No. BC847CE6327HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.1A
Datasheet: BC847CE6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2325 ea
Line Total: USD 0.23 
Availability - 19716
Ship by Wed. 09 Jul to Fri. 11 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
70262
Ship by Fri. 11 Jul to Thu. 17 Jul
MOQ : 6757
Multiples : 1
6757 : USD 0.0385
6969 : USD 0.0373
7195 : USD 0.0362
7435 : USD 0.035
7693 : USD 0.0338
8000 : USD 0.0325
8299 : USD 0.0313
8659 : USD 0.0301
9010 : USD 0.0289
30000 : USD 0.0273

111301
Ship by Fri. 11 Jul to Thu. 17 Jul
MOQ : 8439
Multiples : 1
8439 : USD 0.0308

19716
Ship by Wed. 09 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 0.2325
10 : USD 0.1063
100 : USD 0.0775
500 : USD 0.0598
1000 : USD 0.0506
3000 : USD 0.0506
24000 : USD 0.0275

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847CE6327HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847CE6327HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847...-BC850... NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package 1) Qualified according AEC Q101 1 BC847BL3 is not qualified according AEC Q101 Type Marking Pin Configuration Package BC847A 1Es 1=B 2=E 3=C - - - SOT23 BC847B 1Fs 1=B 2=E 3=C - - - SOT23 BC847BL3* 1F 1=B 2=E 3=C - - - TSLP-3-1 BC847BW 1Fs 1=B 2=E 3=C - - - SOT323 BC847C 1Gs 1=B 2=E 3=C - - - SOT23 BC847CW 1Gs 1=B 2=E 3=C - - - SOT323 BC848A 1Js 1=B 2=E 3=C - - - SOT23 BC848B 1Ks 1=B 2=E 3=C - - - SOT23 BC848BL3 1K 1=B 2=E 3=C - - - TSLP-3-1 BC848BW 1Ks 1=B 2=E 3=C - - - SOT323 BC848C 1Ls 1=B 2=E 3=C - - - SOT23 BC848CW 1Ls 1=B 2=E 3=C - - - SOT323 BC849B 2Bs 1=B 2=E 3=C - - - SOT23 BC849C 2Cs 1=B 2=E 3=C - - - SOT23 BC849CW 2Cs 1=B 2=E 3=C - - - SOT323 BC850B 2Fs 1=B 2=E 3=C - - - SOT23 BC850BW 2Fs 1=B 2=E 3=C - - - SOT323 BC850C 2Gs 1=B 2=E 3=C - - - SOT23 BC850CW 2Gs 1=B 2=E 3=C - - - SOT323 * Not qualified according AEC Q101 2011-09-09 1BC847...-BC850... Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BC847..., BC850... 45 BC848..., BC849... 30 Collector-emitter voltage V CES BC847..., BC850... 50 BC848..., BC849... 30 Collector-base voltage V CBO BC847..., BC850... 50 BC848..., BC849... 30 Emitter-base voltage V EBO BC847..., BC850... 6 BC848..., BC849... 6 100 mA Collector current I C 200 Peak collector current, t 10 ms I p CM mW Total power dissipation- P tot T 71 C, BC847-BC850 330 S T 135 C, BC847BL3-BC848BL3 250 S T 124 C, BC847W-BC850W 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BC847-BC850 240 BC847BL3-BC848BL3 60 BC847W-BC850W 105 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-09-09 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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