BCX68... NPN Silicon AF Transistors 1 For general AF applications 2 High collector current 3 2 High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX68-10 CB 1=B 2=C 3=E SOT89 BCX68-16 CC 1=B 2=C 3=E SOT89 BCX68-25 CD 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Value Unit 20 V Collector-emitter voltage V CEO 25 Collector-base voltage V CBO 5 Emitter-base voltage V EBO 1 A Collector current I C 2 Peak collector current, t 10 ms I p CM 100 mA Base current I B 200 Peak base current I BM 3 W Total power dissipation- P tot T 114 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 12 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-06 1BCX68... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 20 - - Collector-emitter breakdown voltage V V (BR)CEO I = 30 mA, I = 0 C B Collector-base breakdown voltage V 25 - - (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 5 - - (BR)EBO I = 1 A, I = 0 E C Collector-base cutoff current I A CBO V = 25 V, I = 0 - - 0.1 CB E V = 25 V, I = 0 , T = 150 C - - 100 CB E A 1) - DC current gain h FE I = 5 mA, V = 10 V 50 - - C CE I = 500 mA, V = 1 V, BCX68-10 85 100 160 C CE I = 500 mA, V = 1 V, BCX68-16 100 160 250 C CE I = 500 mA, V = 1 V, BCX68-25 160 250 375 C CE I = 1 A, V = 1 V 60 - - C CE 1) Collector-emitter saturation voltage V - - 0.5 V CEsat I = 1 A, I = 100 mA C B 1) Base-emitter voltage V BE(ON) I = 5 mA, V = 10 V - 0.6 - C CE I = 1 A, V = 1 V - - 1 C CE AC Characteristics - 100 - MHz Transition frequency f T I = 100 mA, V = 5 V, f = 20 MHz C CE 1 Pulse test: t < 300s D < 2% 2011-10-06 2