BCX70KE6327HTSA1 Infineon

BCX70KE6327HTSA1 electronic component of Infineon
BCX70KE6327HTSA1 Infineon
BCX70KE6327HTSA1 Bipolar Transistors - BJT
BCX70KE6327HTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCX70KE6327HTSA1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX70KE6327HTSA1 Bipolar Transistors - BJT are a product manufactured by Infineon. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCX70KE6327HTSA1
Manufacturer: Infineon
Category: Bipolar Transistors - BJT
Description: Infineon Technologies Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.1A
Datasheet: BCX70KE6327HTSA1 Datasheet (PDF)
Price (USD)
15000: USD 0.0208 ea
Line Total: USD 312 
Availability : 37830
  
Ship by Thu. 27 Nov to Wed. 03 Dec
QtyUnit Price
15000$ 0.0208

Availability 43364
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 2179
Multiples : 1
QtyUnit Price
2179$ 0.1193
3739$ 0.0696
3781$ 0.0688
5450$ 0.0477
5666$ 0.0459
6712$ 0.0387
7693$ 0.0338
7906$ 0.0329
8098$ 0.0321
15000$ 0.0301
30000$ 0.0292


Availability 49470
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 12500
Multiples : 1
QtyUnit Price
12500$ 0.0375
100000$ 0.0314


Availability 37830
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 15000
Multiples : 3000
QtyUnit Price
15000$ 0.0208


Availability 43364
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 5666
Multiples : 1
QtyUnit Price
5666$ 0.0459
6712$ 0.0387
7408$ 0.0351
7663$ 0.034
7937$ 0.0328
15000$ 0.0304
30000$ 0.0292

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX70KE6327HTSA1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX70KE6327HTSA1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications 2 3 High current gain 1 Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCW60B ABs 1=B 2=E 3=C SOT23 BCW60C ACs 1=B 2=E 3=C SOT23 BCW60D ADs 1=B 2=E 3=C SOT23 BCW60FF AFs 1=B 2=E 3=C SOT23 BCX70G AGs 1=B 2=E 3=C SOT23 BCX70H AHs 1=B 2=E 3=C SOT23 BCX70J AJs 1=B 2=E 3=C SOT23 BCX70K AKs 1=B 2=E 3=C SOT23 1 Pb-containing package may be available upon special request 1 2007-04-20BCW60, BCX70 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BCW60, ...60FF 32 BCX70 45 Collector-base voltage V CBO BCW60, ...60FF 32 BCX70 45 6 Emitter-base voltage V EBO 100 mA Collector current I C 200 Peak collector current I CM 200 Peak base current I BM 330 mW Total power dissipation P tot T 71 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 240 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-04-20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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