BDP 949 H6327 Infineon

BDP947 BDP949 BDP953 Silicon NPN Transistors For AF driver and output stages 4 3 High collector current 2 1 High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950, BDP954 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BDP947 BDP947 1=B 2=C 3=E 4=C - - SOT223 BDP949 BDP949 1=B 2=C 3=E 4=C - - SOT223 BDP953 BDP953 1=B 2=C 3=E 4=C - - SOT223 1 2011-10-05BDP947 BDP949 BDP953 Maximum Ratings Parameter Symbol Value Unit V Collector-emitter voltage V CEO BDP947 45 BDP949 60 BDP953 100 Collector-base voltage V CBO BDP947 45 BDP949 60 BDP953 120 5 Emitter-base voltage V EBO 3 A Collector current I C 5 Peak collector current, t 10 ms I p CM 200 mA Base current I B 500 Peak base current, t 10 ms I p BM 5 W Total power dissipation- P tot T 100 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 10 thJS 2 2011-10-05