BSC072N03LD G OptiMOS3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 7.2 m DS(on),max I 20 A Fast switching MOSFETs for SMPS D PG-TDSON-8 Optimized technology for DC/DC converters 1) for target applications Qualified according to JEDEC Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superior thermal resistance 100% avalanche tested Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSC072N03LD G PG-TDSON-8 072N03LD Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state I V =10 V, T =25 C 20 Continuous drain current A D GS C V =10 V, T =100 C 20 GS C V =4.5 V, T =25 C 20 GS C V =4.5 V, GS 20 T =100 C C 3) V =10 V, T =25 C 17.9 11.5 GS A 2) I T =25 C 80 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =20 A, R =25 90 mJ AS D GS V 20 Gate source voltage V GS P T =25 C Power dissipation 57 W tot C 3) T =25 C 3.6 1.5 A , T Operating and storage temperature T -55 ... 150 C j stg 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 Rev. 1.4 page 1 2009-10-23BSC072N03LD G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case bottom - - 2.2 K/W thJC top 20 R t10 s - - 35 thJA Thermal resistance, junction - 3) ambient, 6 cm cooling area steady state - - 85 Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =1 mA 30 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1 - 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 10 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =20 A - 7.5 9.4 m DS(on) GS D V =10 V, I =20 A - 6.0 7.2 GS D Gate resistance R - 1.5 2.3 G V >2 I R , DS D DS(on)max g Transconductance 28 57 - S fs I =20 A D 2) See figure 3 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. One transistor active. Rev. 1.4 page 2 2009-10-23