BSD816SN OptiMOS2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 160 mW DS(on),max GS Enhancement mode V =1.8 V 240 GS Ultra Logic level (1.8V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD816SN PG-SOT363 H6327: 3000 pcs/ reel XAs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 1.4 A D A T =70C 1.1 A Pulsed drain current I T =25C 5.6 D,pulse A E I =1.4A, R =25W Avalanche energy, single pulse 3.7 mJ AS D GS I =1.4A, V =16V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max V Gate source voltage 8 V GS 1) P T =25C 0.5 W Power dissipation tot A Operating and storage temperature T , T -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.5 page 1 2013-04-15BSD816SN Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W thJA minimal footprint junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250 A 20 - - V (BR)DSS GS D V V =V , I =3.7A Gate threshold voltage 0.3 0.55 0.95 GS(th) DS GS D V =20V, V =0V, DS GS I Drain-source leakage current - - 1 mA DSS T =25C j V =20V, V =0V, DS GS - - 100 T =150C j I V =8V, V =0V Gate-source leakage current - - 100 nA GSS GS DS V =1.8V, GS R Drain-source on-state resistance - 158 240 mW DS(on) I =0.44 A D V =2.5V, I =1.4A - 112 160 GS D V >2 I R , DS D DS(on)max g Transconductance 4.8 - S fs I =1.1A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide 70 m thick and 20mm long they are present on both sides of the PCB. Rev 2.5 page 2 2013-04-15