BSO330N02K G OptiMOS 2 Power-Transistor Product Summary Features V 20 V DS For fast switching converters and sync. rectification R V =4.5 V 30 mW DS(on),max GS 1) Qualified according to JEDEC for target applications V =2.5 V 50 GS Super Logic level 2.5V rated N-channel I 6.5 A D Dual n-channel PG-DSO-8 Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) Avalanche rated Pb-free plating RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking BSO330N02K PG-DSO-8 330N2K Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 10 secs steady state 2) I Continuous drain current V =4.5V, T =25C 6.5 5.4 A D gs C 2) 5.2 4.3 V =4.5V, T =70C gs C 2) V =2.5V, T =25C 5.1 4.2 A gs C 2) 4 3.3 V =2.5V, T =70C gs C 3) Pulsed drain current I 26 T =25C D,pulse C E I =6.5A, R =25W 19 Avalanche energy, single pulse mJ AS D GS I =6.5A, V =20V, D DS 6 Reverse diode dv /dt dv /dt di /dt =200A/s, kV/s T =150C j,max V 12 Gate source voltage V GS 2) P Power dissipation 2.0 1.4 W tot T =25C A 1) 2.5 T =25 C A T , T Operating and storage temperature -55 ... 150 C j stg 0 (0V to 250V) ESD Class 55/150/56 IEC climatic category DIN IEC 68-1 Rev.1.02 page 1 2013-11-11BSO330N02K G Thermal characteristics Thermal resistance, R - - 50 K/W thJS junction - soldering point Thermal resistance, minimal footprint, R - - 110 thJA t 10 s junction - ambient p minimal footprint, - - 150 steady state 2 2) 6 cm cooling area , - - 63 t 10 s p 2 2) 6 cm cooling area , - - 90 steady state Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 20 - - V (BR)DSS GS D V V =V , I =20A Gate threshold voltage 0.7 0.95 1.2 GS(th) DS GS D V =20V, V =0V, DS GS I Zero gate voltage drain current - - 1 A DSS T =25C j V =20V, V =0V, DS GS - - 100 T =125C j I V =12V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =2.5V, I =5.1A - 38 50 mW DS(on) GS D V =4.5V, I =6.5A - 24 30 GS D R Gate resistance - 1.3 - W G V >2 I R , DS D DS(on)max g Transconductance 10 20 - S fs I =6.5A D 1) J-STD20 and JESD22 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 2 2013-11-11