BSP149 SIPMOS Small-Signal-Transistor Product Summary Features V 200 V DS N-channel R 3.5 DS(on),max Depletion mode I 0.14 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead plating RoHS compliant PG-SOT223 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Packaging Type Package Tape and Reel Information Marking Packaging BSP149 PG-SOT223 H6327: 1000 pcs/reel BSP149 Non dry BSP149 PG-SOT223 H6327: 1000 pcs/reel BSP149 Non dry BSP149 PG-SOT223 H6906: 1000 pcs/reel BSP149 Non dry BSP149 PG-SOT223 H6906: 1000 pcs/reel BSP149 Non dry sorted in V bands1) GS(th) MMaximumaximum raratingstings, atat TT ==2525 CC, ununlessless ootherwisetherwise specspecifiedified j Value Parameter Symbol Conditions Unit I T =25 C 0.66 A Continuous drain current D A T =70 C 0.53 A I T =25 C Pulsed drain current 2.6 D,pulse A I =0.66 A, D V =160 V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200 A/s, T =150 C j,max V Gate source voltage 20 V GS ESD Class 1B (>500,<600) (JESD22-A114-HBM) Power dissipation P T =25 C 1.8 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.1Rev. 2.1 page 1page 1 2012-11-282012-11-28BSP149 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 25 K/W thJS junction - soldering point (pin 4) R SMD version, device on PCB minimal footprint - - 115 thJA 2 1) -- 70 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =-3 V, I =250 A 200 - - V (BR)DSS GS D V V =3 V, I =400 A Gate threshold voltage -2.1 -1.4 -1 GS(th) DS D V =200 V, DS Drain-source cutoff current I - - 0.1 A D(off) V =-3 V, T =25 C GS j V =200 V, DS -- 5 V =-3 V, T =125 C GS jj I V =20 V, V =0 V Gate-source leakage current - - 10 nA GSS GS DS I V =0 V, V =10 V On-state drain current 140 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =70 mA - 1.7 3.5 DS(on) GS D V =10 V, I =660 mA - 1.0 1.8 GS D V >2 I R , DS D DS(on)max Transconductance g 0.4 0.8 - S fs I =0.48 A D 3) Threshold voltage V sorted in bands GS(th) J V V =3 V, I =400 A -1.2 - -1 V GS(th) DS D K -1.35--1.15 L -1.5--1.3 M -1.65--1.45 N -1.8--1.6 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.1Rev. 2.1 page 2page 2 2012-11-282012-11-28