X-On Electronics has gained recognition as a prominent supplier of BSP315P MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP315P MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSP315P Infineon

BSP315P electronic component of Infineon
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See Product Specifications
Part No.BSP315P
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET, P, LOGIC, SOT-223
Datasheet: BSP315P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9859 ea
Line Total: USD 0.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9859
100 : USD 0.685
200 : USD 0.5483
500 : USD 0.4454
1000 : USD 0.3602

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Current Id Max
Current Temperature
External Depth
External Length / Height
External Width
Full Power Rating Temperature
Junction Temperature Tj Max
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Pulse Current Idm
Smd Marking
Tape Width
Termination Type
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
Voltage Vgs Th Max
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We are delighted to provide the BSP315P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP315P and other electronic components in the MOSFETs category and beyond.

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BSP 315 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage V -60 V DS Enhancement mode Drain-Source on-state resistance R 0.8 DS(on) Avalanche rated Continuous drain current I -1.17 A D Logic Level 4 dv/dt rated 3 2 1 VPS05163 Type Package Tape and Reel Information Pin 1 Pin2/4 PIN 3 P-SOT-223 BSP315 P E6327 G D S PG-SOT-223 BSP315 P L6327 Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current I A D T = 25 C -1.17 A T = 70 C -0.94 A Pulsed drain current I -4.68 D puls T = 25 C A Avalanche energy, single pulse E 24 mJ AS I = -1.17 A , V = -25 V, R = 25 D DD GS Avalanche energy, periodic limited by T E 0.18 jmax AR Reverse diode dv/dt dv/dt 6 kV/s I = -1.17 A, V = -48 V, di/dt = 200 A/s, S DS T = 150 C jmax Gate source voltage V V 20 GS Power dissipation P 1.8 W tot T = 25 C A Operating and storage temperature T , T -55...+150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev.1.3 Page 1 2005-11-23BSP 315 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point R - - 25 K/W thJS (Pin 4) SMD version, device on PCB: R K/W thJA min. footprint - - 115 2 1) 6 cm cooling area - - 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain- source breakdown voltage V -60 - - V (BR)DSS V = 0 V, I = -250 A GS D Gate threshold voltage, V = V V -1 -1.5 -2 GS DS GS(th) I = -160 A D Zero gate voltage drain current I A DSS V = -60 V, V = 0 V, T = 25 C - -0.1 -1 DS GS j V = -60 V, V = 0 V, T = 125 C - -10 -100 DS GS j Gate-source leakage current I - -10 -100 nA GSS V = -20 V, V = 0 V GS DS Drain-Source on-state resistance R - 0.8 1.4 DS(on) V = -4.5 V, I = -0.89 A GS D Drain-Source on-state resistance R - 0.5 0.8 DS(on) V = -10 V, I = -1.17 A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.3 Page 2 2005-11-23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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