BSP317PH6327XTSA1 Infineon

BSP317PH6327XTSA1 electronic component of Infineon
BSP317PH6327XTSA1 Infineon
BSP317PH6327XTSA1 MOSFETs
BSP317PH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSP317PH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSP317PH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSP317PH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Datasheet: BSP317PH6327XTSA1 Datasheet (PDF)
Price (USD)
1000: USD 0.273 ea
Line Total: USD 273 
Availability : 18430
  
Ship by Thu. 30 Oct to Wed. 05 Nov
QtyUnit Price
1000$ 0.273
2000$ 0.2665
3000$ 0.2562
4000$ 0.2562
5000$ 0.25

Availability 19179
Ship by Tue. 28 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1825
10$ 0.77
100$ 0.4554
500$ 0.3641
1000$ 0.3344
2000$ 0.2838
5000$ 0.2838
10000$ 0.2838
25000$ 0.2717


Availability 18430
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.273
2000$ 0.2665
3000$ 0.2562
4000$ 0.2562
5000$ 0.25


Availability 2356
Ship by Tue. 28 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.4
10$ 0.9324
46$ 0.4256
125$ 0.4018
2000$ 0.3976


Availability 97000
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4244
2000$ 0.333
5000$ 0.3158
10000$ 0.3153
25000$ 0.3135

   
Manufacturer
Product Category
Technology
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSP317PH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSP317PH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSP317P SIPMOS Small-Signal-Transistor Product Summary Feature V -250 V DS P-Channel R 4 DS(on) Enhancement mode I -0.43 A D Logic Level PG-SOT223 dv/dt rated Drain 4 pin 2/4 x Qualified according to AEC Q101 Gate pin1 3 HalogenfreeaccordingtoIEC61249221 Source 2 pin 3 1 VPS05163 Type Package Tape and Reel Information Marking Packaging PG-SOT223 BSP317P H6327: 1000 pcs/reel BSP317PBSP317P Non dry Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -0.43 A T =70C -0.34 A -1.72 Pulsed drain current I D puls T =25C A 6 kV/s Reverse diode dv/dt dv/dt I =-0.43A, V =-200V, di/dt=-200A/s, T =150C S DS jmax V Gate source voltage V 20 GS Power dissipation P 1.8 W tot T =25C A C Operating and storage temperature T , T -55... +150 j stg 55/150/56 IEC climatic category DIN IEC 68-1 ESD Class Class 1b JESD22-A114-HBM 2.4 Rev.1.65 Page 1 20120402BSP317P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - 15 25 K/W Thermal resistance, junction - soldering point R thJS (Pin 4) SMD version, device on PCB: R thJA min. footprint - 80 115 2 1) 6 cm cooling area - 48 70 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -250 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -1 -1.5 -2 Gate threshold voltage, V = V V GS DS GS(th) I =-370A D A Zero gate voltage drain current I DSS V =-250V, V =0, T =25C - -0.1 -0.2 DS GS j V =-250V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-20V, V =0 GS DS - 3.3 5 Drain-source on-state resistance R DS(on) V =-4.5V, I =-0.39A GS D - 3 4 Drain-source on-state resistance R DS(on) V =-10V, I =-0.43A GS D 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2 20120402

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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