BSV236SPH6327XTSA1 Infineon

BSV236SPH6327XTSA1 electronic component of Infineon
BSV236SPH6327XTSA1 Infineon
BSV236SPH6327XTSA1 MOSFETs
BSV236SPH6327XTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSV236SPH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSV236SPH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSV236SPH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
Datasheet: BSV236SPH6327XTSA1 Datasheet (PDF)
Price (USD)
788: USD 0.3302 ea
Line Total: USD 260.2 
Availability : 1610
  
Ship by Thu. 14 Aug to Wed. 20 Aug
QtyUnit Price
788$ 0.3302
1118$ 0.2327
1177$ 0.221

Availability 108
Ship by Thu. 21 Aug to Tue. 26 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9124
10$ 0.7378
30$ 0.6504
100$ 0.3949
500$ 0.3597
1000$ 0.3418


Availability 1610
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 788
Multiples : 1
QtyUnit Price
788$ 0.3302
1118$ 0.2327
1177$ 0.221


Availability 2910
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1298
6000$ 0.1081
9000$ 0.1072
15000$ 0.1006
21000$ 0.0966
30000$ 0.0929
75000$ 0.0845
150000$ 0.0831


Availability 544170
Ship by Thu. 14 Aug to Wed. 20 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.1136
282000$ 0.0997
423000$ 0.0929

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
On-State Resistance
Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSV236SPH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSV236SPH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSV 236SP OptiMOS -P Small-Signal-Transistor Product Summary Feature V -20 V DS P-Channel R 175 m DS(on) Enhancement mode I -1.5 A D Super Logic Level (2.5 V rated) PG-SOT-363 150C operating temperature 4 Avalanche rated 5 6 dv/dt rated 3 2 1 VPS05604 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and Reel inf Marking Source BSV 236SP PG-SOT-363 H6327:3000pcs/r. pin 4 X2s Maximum Ratings,at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit A Continuous drain current I D T =25C -1.5 A T =70C -1.2 A -6 Pulsed drain current I D puls T =25C A 9.5 mJ Avalanche energy, single pulse E AS I =-1.5 A , V =-10V, R =25 D DD GS -6 kV/s Reverse diode dv/dt dv/dt I =-1.5A, V =-16V, di/dt=200A/s, T =150C S DS jmax V Gate source voltage V 12 GS 0.56 W Power dissipation P tot T =25C A C Operating and storage temperature T , T -55... +150 j stg IEC climatic category DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev 1.5 Page 1 2011-07-14 BSV 236SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 90 K/W Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA min. footprint - - 220 2 1) 6 cm cooling area - - 110 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics -20 - - V Drain-source breakdown voltage V (BR)DSS V =0, I =-250A GS D -0.6 -0.9 -1.2 Gate threshold voltage, V = V V GS DS GS(th) I =-8A D A Zero gate voltage drain current I DSS V =-20V, V =0, T =25C - -0.1 -1 DS GS j V =-20V, V =0, T =150C - -10 -100 DS GS j - -10 -100 nA Gate-source leakage current I GSS V =-12V, V =0 GS DS - 193 285 Drain-source on-state resistance R m DS(on) V =-2.5V, I =-0.8A GS D - 131 175 Drain-source on-state resistance R DS(on) V =-4.5, I =-1.5A GS D 1 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t 10 sec. Rev 1.5 Page 2 2011-07-14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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