BSZ086P03NS3EGATMA1 Infineon

BSZ086P03NS3EGATMA1 electronic component of Infineon
BSZ086P03NS3EGATMA1 Infineon
BSZ086P03NS3EGATMA1 MOSFETs
BSZ086P03NS3EGATMA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BSZ086P03NS3EGATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ086P03NS3EGATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. BSZ086P03NS3EGATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET P-Ch -30V 13.5A TSDSON-8 OptiMOS P3
Datasheet: BSZ086P03NS3EGATMA1 Datasheet (PDF)
Price (USD)
1: USD 1.0038 ea
Line Total: USD 1 
Availability : 10384
  
Ship by Fri. 14 Nov to Tue. 18 Nov
QtyUnit Price
1$ 1.0038
10$ 0.645
100$ 0.4334
500$ 0.3894
1000$ 0.3476
5000$ 0.3179
10000$ 0.3113

Availability 44
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2764
10$ 1.0318
30$ 0.6801
100$ 0.5295
500$ 0.4806
1000$ 0.4563


Availability 10384
Ship by Fri. 14 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0038
10$ 0.645
100$ 0.4334
500$ 0.3894
1000$ 0.3476
5000$ 0.3179
10000$ 0.3113

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Transistor Type
Brand
Configuration
Height
Length
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSZ086P03NS3EGATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ086P03NS3EGATMA1 and other electronic components in the MOSFETs category and beyond.

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BSZ086P03NS3E G TM OptiMOS P3 Power-Transistor Product Summary Features V -30 V DS single P-Channel in S3O8 R 8.6 m DS(on),max 1) Qualified according JEDEC for target applications I -40 A D 150 C operating temperature PG-TSDSON-8 V =25 V, specially suited for notebook applications GS Pb-free RoHS compliant ESD protected applications: battery management, load switching Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free Packing BSZ086P03NS3E G PG-TSDSON-8 Yes 086P3NE Yes non-dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current -40 A D C T =70 C -40 C 2) -13.5 T =25 C A 3) Pulsed drain current I -160 D,pulse T =25 C C E 105 Avalanche energy, single pulse I =-20 A, R =25 mJ AS D GS V 25 Gate source voltage V GS Power dissipation P T =25 C 69 W tot A 2) 2.1 T =25 C A T , T -55 150 Operating and storage temperature C j stg ESD class JESD22-A114 HBM 3 (>= 4 kV) Soldering temperature 260 C 55/150/56 IEC climatic category DIN IEC 68-1 1) J-STD20 and JESD22 Rev. 2.03Rev. 2.03 page 1page 1 2012-04-132012-04-13BSZ086P03NS3E G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.8 K/W thJC junction - case Thermal resistance, 2 2) R -- 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =-250A -30 - - V (BR)DSS GS D V V =V , I =-105 A Gate threshold voltage -3.1 -2.5 -1.9 GS(th) DS GS D V =-30 V, V =0 V, DS GS Zero gate voltage drain current I - - -1 A DSS T =25 C j V =-30 V, ,V =0 V, , DSDS GSGS - - -1010 T =125 C j Gate-source leakage current I V =-25 V, V =0 V - - -10 A GSS GS DS Drain-source on-state resistance R V =-6 V, I =-20 A - 8.7 13.4 m DS(on) GS D V =-10 V, I =-20 A - 6.5 8.6 GS D R Gate resistance - 2.2 - G V >2 I R , DS D DS(on)max g Transconductance 30 43 - S fs I =-20 A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.03Rev. 2.03 page 2page 2 2012-04-132012-04-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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