BSZ110N08NS5 Infineon

MOSFET Metal Oxide Semiconductor Field Effect Transistor TM OptiMOS OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Higher solder joint reliability with enlarged source interconnection S1 8D S2 7D Table 1 Key Performance Parameters Parameter Value Unit S3 6D V 80 V DS G4 5D R 11.0 m DS(on),max I 40 A D Q 19 nC oss Q G(0V..10V) 15 nC Type / Ordering Code Package Marking Related Links BSZ110N08NS5 PG-TSDSON-8 FL 110N08N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2014-05-05