X-On Electronics has gained recognition as a prominent supplier of BSZ900N15NS3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSZ900N15NS3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSZ900N15NS3GATMA1 Infineon

BSZ900N15NS3GATMA1 electronic component of Infineon
BSZ900N15NS3GATMA1 Infineon
BSZ900N15NS3GATMA1 MOSFETs
BSZ900N15NS3GATMA1  Semiconductors

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See Product Specifications
Part No. BSZ900N15NS3GATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; 38W; PG-TSDSON-8
Datasheet: BSZ900N15NS3GATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.475 ea
Line Total: USD 2375 
Availability - 14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 0.475

10699
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.1113
10 : USD 0.8256
25 : USD 0.7656
100 : USD 0.6435
500 : USD 0.5797
1000 : USD 0.5357
5000 : USD 0.5137

2966
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 1.596
5 : USD 1.2488
24 : USD 0.7994
65 : USD 0.756
500 : USD 0.7266

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Drain Current
Gate-Source Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSZ900N15NS3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSZ900N15NS3GATMA1 and other electronic components in the MOSFETs category and beyond.

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s BSZ900N15NS3 G TM OptiMOS 3 Power-Transistor Product Summary Package V 150 V DS Marking R 90 m DS(on),max N-channel, normal level I 13 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSZ900N15NS3 G PG-TSDSON-8 900N15N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 13 A D C T =100 C 8 C 2) I T =25 C 52 Pulsed drain current D,pulse C E I =10 A, R =25 Avalanche energy, single pulse 30 mJ AS D GS Gate source voltage V 20 V GS P T =25 C Power dissipation 38 W tot C Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) J-STD20 and JESD22 Rev. 2.1 page 1 2011-05-16BSZ900N15NS3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 3.3 K/W thJC Thermal resistance, 2 3) R -- 60 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =1 mA Drain-source breakdown voltage 150 - - V (BR)DSS GS D V V =V , I =20 A Gate threshold voltage 234 GS(th) DS GS D V =120 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =120 V, V =0 V, DS GS - 10 100 T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10 V, I =10 A -74 90 m DS(on) GS D V =8 V, I =5 A -75 91 GS D R Gate resistance - 1.7 - G V >2 I R , DS D DS(on)max Transconductance g 612 - S fs I =10 A D 3) see figure 3 Rev. 2.1 page 2 2011-05-16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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