Product Information

IGT60R070D1ATMA1

IGT60R070D1ATMA1 electronic component of Infineon

Datasheet
Transistor: N-JFET; CoolGaN™; unipolar; 600V; 31A; Idm:60A; 125W

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 24.5249
10 : USD 21.7829
25 : USD 19.8286
50 : USD 17.2074
100 : USD 17.0312
250 : USD 16.6905
500 : USD 16.6905
1000 : USD 16.6905
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 27.7545
10 : USD 25.6004
100 : USD 23.9745
2000 : USD 23.9642
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 2000
1 : USD 21.9965
2 : USD 20.0263
N/A

Obsolete
     
Manufacturer
Product Category
Technology
Polarisation
Mounting
Kind Of Package
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Pulsed Drain Current
Gate Current
Power Dissipation
Gate-Source Voltage
LoadingGif

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IGT60R070D1 IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Features Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge G SK Capable of reverse conduction Low gate charge, low output charge 1 Superior commutation ruggedness 1 Qualified for industrial applications according to JEDEC SK G Standards (JESD47 and JESD22) Benefits Gate 8 Drain drain contact Improves system efficiency Kelvin Source 7 Improves power density Source 1,2,3,4,5,6 Enables higher operating frequency System cost reduction savings Reduces EMI Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN reliability white paper and contact Infineon regional support Table 1 Key Performance Parameters at T = 25 C j Parameter Value Unit V 600 V DS,max R 70 m DS(on),max QG,typ 5.8 nC I 60 A D,pulse Q 400 V 41 nC oss Q 0 nC rr Table 2 Ordering Information Type / Ordering Code Package Marking Related links IGT60R070D1 PG-HSOF-8-3 60R070D1 see Appendix A Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 2.13 www.infineon.com 2021-04-27 IGT60R070D1 600V CoolGaN enhancement-mode Power Transistor Table of Contents Features ..... 1 Benefits ...1 Applications ................................................................................................................................... 1 Table of Contents ........................................................................................................................... 2 1 Maximum ratings ........................................................................................................... 3 2 Thermal characteristics .................................................................................................. 4 3 Electrical characteristics ................................................................................................ 5 4 Electrical characteristics diagrams .................................................................................. 7 5 Test Circuits ................................................................................................................. 13 6 Package Outlines .......................................................................................................... 14 7 Appendix ..................................................................................................................... 15 8 Revision History ........................................................................................................... 16 Final Data Sheet 2 Rev. 2.13 2021-04-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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