IPA60R385CP CoolMOS Power Transistor Product Summary Features V 1 /.) O =L % Ri V)DL:HI ><JG: D B:G>I/ M. HG R T Y ) ,1. = % Ri V2AIG6ADL<6I:8=6G<: Q *0 < X%eja MIG:B:9K 9IG6I:9 V%><=E:6 8JGG:CI86E67>A>IN * V.J6A> >:9for industrial grade applications688DG9>C<ID I &MH++) V-7 G::A:69EA6I>C< /D%08DBEA>6CI Halogen free mold compound CoolMOS isspecially designedfor: V%6G9HL>I8=>C<0*-0IDEDAD<>:H Type Package Ordering Code Marking BI9/)K,1.<I I &MH++) LI))))12,*/ /K,1.I Maximumratings,6IT Y JCA:HHDI=:GL>H:HE:8> >:9 Value Parameter Symbol Conditions Unit + I T Y 2 ) 9 DCI>CJDJH9G6>C8JGG:CI = < T Y . 0 < , I T Y +0 -JAH:99G6>C8JGG:CI =%af dV < E I V 3 K6A6C8=::C:G<N H>C<A:EJAH: ++0 C 9L = == , - E I V 3 ) , K6A6C8=::C:G<N G:E:I>I>K:t 9K = == 9K , %- I , 9 K6A6C8=:8JGG:CI G:E:I>I>K:t 9K 9K *,019v(UtGJ<<:9C:HH 9v(Ut V 3 .) O( d =L 6I:HDJG8:KDAI6<: V deReZT v+) O L f %O v,) -DL:G9>HH>E6I>DC P T Y ,* P e e < ,E:G6I>C<6C9HIDG6<:I:BE:G6IJG: T T u< deX *DJCI>C<IDGFJ: * H8G:LH +8B Rev. 2.3 Page 1 2018-02-14IPA60R385CP Maximumratings,6IT Y JCA:HHDI=:GL>H:HE:8> >:9 Parameter Symbol Conditions Value Unit + I 2 9 DCI>CJDJH9>D9: DGL6G98JGG:CI L T Y < , I +0 >D9:EJAH:8JGG:CI L%af dV . Uv(Ut *. O( d /:K:GH:9>D9:9v(Ut Parameter Symbol Conditions Values Unit min. typ. max. Thermalcharacteristics 1=:GB6AG:H>HI6C8: JC8I>DC 86H: R & & - D(P eYC< 1=:GB6AG:H>HI6C8: JC8I>DC R VRUVU & & 1) eYC9 R SZV e 0DA9:G>C<I:BE:G6IJG: BB >C T & & +/) u< d U L6K:HDA9:G>C<DCAN6AADL:96IA:69H GDB86H: DG H Electrical characteristics,6IT Y JCA:HHDI=:GL>H:HE:8> >:9 Staticcharacteristics V V 3 I G6>C HDJG8:7G:6 9DLCKDAI6<: /)) & & O K =LL L = 6I:I=G:H=DA9KDAI6<: V V 6V I B + . , , . eY =L L = V 3 V 3 =L L I 5:GD<6I:KDAI6<:9G6>C8JGG:CI & & * w9 =LL T Y V 3 V 3 =L L & *) & T Y I V 3 V 3 6I: HDJG8:A:6 6<:8JGG:CI & & *)) 9 LL L =L V 3 I L = R G6>C HDJG8:DC HI6I:G:H>HI6C8: & ) ,. ) ,1. = T Y V 3 I L = & ) 2- & T Y R 6I:G:H>HI6C8: f *%O DE:C9G6>C Rev. 2.3 Page 2 2018-02-14