IPB019N06L3GATMA1 Infineon

Name: IPB019N06L3GATMA1
Brand: Infineon
SKU: IPB019N06L3GATMA1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IPB019N06L3GATMA1 electronic component of Infineon

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPB019N06L3GATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB019N06L3GATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	IPB019N06L3GATMA1
Manufacturer:	Infineon
Category:	MOSFETs
Description:	Transistor: N-MOSFET; unipolar; 60V; 120A; 250W; PG-TO263-3
Datasheet:	IPB019N06L3GATMA1 Datasheet (PDF)

Price (USD)

1000: USD 1.826 ea
Line Total: USD 1826

Availability : 5820

Ship by Fri. 21 Nov to Thu. 27 Nov

Qty Unit Price
1000 $ 1.826
5000 $ 1.7841

IPB019N06L3GATMA1 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 3299

Ship by Wed. 19 Nov to Fri. 21 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 5.025
10 $ 3.128
100 $ 2.409
500 $ 2.211
1000 $ 1.936
2000 $ 1.936
25000 $ 1.925

Availability 891

Ship by Wed. 19 Nov to Fri. 21 Nov

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 3.304
10 $ 2.044
26 $ 1.946
50 $ 1.932
200 $ 1.862

Availability 817

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 62
Multiples : 1

Qty Unit Price
62 $ 4.212
84 $ 3.12
100 $ 3.042
200 $ 2.15
500 $ 2.1364

Availability 6671

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 178
Multiples : 1

Qty Unit Price
178 $ 2.6406
500 $ 2.5
1000 $ 2.3593
10000 $ 2.2187

Availability 5820

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 1000
Multiples : 1000

Qty Unit Price
1000 $ 1.826
5000 $ 1.7841

Availability 441

Ship by Fri. 21 Nov to Thu. 27 Nov

MOQ : 178
Multiples : 1

Qty Unit Price
178 $ 2.6406
500 $ 2.5
1000 $ 2.3593
10000 $ 2.2187

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

Technology

Optimos 3 Optimos 3

Polarisation

Unipolar Unipolar

Case

Pg - To263 - 3 Pg - To263 - 3

Mounting

Smd Smd

Type Of Transistor

N - Mosfet N - Mosfet

On-State Resistance

1.9 mOhms 1.9 mOhms

Drain-Source Voltage

60 V 60 V

Drain Current

120 A 120 A

Gate-Source Voltage

20 V 20 V

Power Dissipation

250 W 250 W

Notes:- Show Stocked Products With Similar Attributes.

IPB019N06L3GATMA1 Alternative Parts

We are delighted to provide the IPB019N06L3GATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB019N06L3GATMA1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPB019N06L3GATMA1 is a power MOSFET component produced by Infineon. It is a N-channel enhancement mode transistor with superior avalanche characteristics. It has a drain to source voltage rating of 60V, an on-resistance of 0.48O, and a maximum drain current of 19A. Additionally, it features an operating temperature range of -55°C to 175°C, a max Pulsed Drain Current of 38A, and a mounting style of SMD (surface-mount).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
1	$ 5.025
10	$ 3.128
100	$ 2.409
500	$ 2.211
1000	$ 1.936
2000	$ 1.936
25000	$ 1.925

Qty	Unit Price
62	$ 4.212
84	$ 3.12
100	$ 3.042
200	$ 2.15
500	$ 2.1364

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