IPB120P04P4-04
IPI120P04P4-04, IPP120P04P4-04
OptiMOS -P2 Power-Transistor
Product Summary
V -40 V
DS
R (SMD Version) 3.5 mW
DS(on)
I -120 A
D
Features
P-channel - Normal Level - Enhancement mode
AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
MSL1 up to 260C peak reflow
175C operating temperature
Green package (RoHS compliant)
100% Avalanche tested
Type Package Marking
IPB120P04P4-04 PG-TO263-3-2 4PP0404
IPI120P04P4-04 PG-TO262-3-1 4PP0404
IPP120P04P4-04 PG-TO220-3-1 4PP0404
Maximum ratings, at T =25 C, unless otherwise specified
j
Parameter Symbol Conditions Value Unit
T =25C,
C
1)
I -120 A
Continuous drain current D
V =-10V
GS
T =100C,
C
-110
2)
V =-10V
GS
2)
I T =25C -480
Pulsed drain current
D,pulse C
E I =-60A
Avalanche energy, single pulse 78 mJ
AS D
I
Avalanche current, single pulse - -120 A
AS
Gate source voltage V - 20 V
GS
Power dissipation P T =25C 136 W
tot C
T , T
Operating and storage temperature - -55 ... +175 C
j stg
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Rev. 1.1 page 1 2015-05-27IPB120P04P4-04
IPI120P04P4-04, IPP120P04P4-04
Values
Parameter Symbol Conditions Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - - 1.1 K/W
thJC
Thermal resistance, junction -
R
- - - 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
2 3)
- - 40
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0V, I = -1mA
Drain-source breakdown voltage -40 - - V
(BR)DSS GS D
V V =V , I =-340A
Gate threshold voltage -2.0 -3.0 -4.0
GS(th) DS GS D
V =-32V, V =0V,
DS GS
I
Zero gate voltage drain current - -0.05 -1 A
DSS
T =25C
j
V =-32V, V =0V,
DS GS
- -20 -200
2)
T =125C
j
I V =-20V, V =0V
Gate-source leakage current - - -100 nA
GSS GS DS
Drain-source on-state resistance R V =-10V, I =-100A - 2.9 3.8
mW
DS(on) GS D
V =-10V, I =-100A,
GS D
- 2.6 3.5
SMD version
Rev. 1.1 page 2 2015-05-27