IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.9 m W DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Source pin 3 Type Package Marking Gate IPB70P04P4L-08 PG-TO263-3-2 4P04L08 pin 1 IPI70P04P4L-08 PG-TO262-3-1 4P04L08 Drain IPP70P04P4L-08 PG-TO220-3-1 4P04L08 pin 2/Tab Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit T =25C, C 1) I -80 A Continuous drain current D V =-10V GS T =100C, C -56 1) V =-10V GS 2) I T =25C -320 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =-40A 24 mJ AS D I Avalanche current, single pulse - -80 A AS V Gate source voltage - +5/-16 V GS P T =25C Power dissipation 75 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2019-07-03IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 2.0 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = -1mA -40 - - V (BR)DSS GS D V V =V , I =-120A Gate threshold voltage -1.2 -1.7 -2.2 GS(th) DS GS D V =-32V, V =0V, DS GS Zero gate voltage drain current I - -0.05 -1 A DSS T =25C j V =-32V, V =0V, DS GS - -20 -200 2) T =125C j I V =-16V, V =0V Gate-source leakage current - - -100 nA GSS GS DS R V =-4.5V, I =-40A Drain-source on-state resistance - 9.9 13.3 m W DS(on) GS D V =-4.5V, I =-40A, GS D - 9.6 13 SMD version V =-10V, I =-80A - 6.8 8.2 GS D V =-10V, I =-80A, GS D - 6.5 7.9 SMD version Rev. 1.1 page 2 2019-07-03