IPD082N10N3G Infineon

IPD082N10N3G electronic component of Infineon
IPD082N10N3G Infineon
IPD082N10N3G MOSFETs
IPD082N10N3G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPD082N10N3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD082N10N3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPD082N10N3G
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET N Trench 100V 80A 3.5V @ 75uA 8.6 mΩ @ 73A,10V TO-252-2 (DPAK) RoHS
Datasheet: IPD082N10N3G Datasheet (PDF)
Price (USD)
1: USD 3.0836 ea
Line Total: USD 3.08 
Availability : 1116
  
Ship by Fri. 21 Nov to Thu. 27 Nov
QtyUnit Price
1$ 3.0836
10$ 1.9345
30$ 1.5532
100$ 1.2166
500$ 1.1227
1000$ 1.0793

Availability 1116
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.0836
10$ 1.9345
30$ 1.5532
100$ 1.2166
500$ 1.1227
1000$ 1.0793

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD082N10N3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD082N10N3G and other electronic components in the MOSFETs category and beyond.

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.The IPD082N10N3G is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Infineon. It has a 100V drain-to-source voltage (Vds), and is rated for 80A current at 3.5V gate threshold voltage (Vgs). It has a low on-state resistance (Rds) of 8.6 milliohm at 73A, and a low gate charge (Qg) of 75uA at 10V. The device is packaged in a TO-252-2 (DPAK) package, which is RoHS compliant, compatible with lead-free printed circuit boards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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