IPD600N25N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS N-channel, normal level R 60 m W DS(on),max Excellent gate charge x R product (FOM) DS(on) I 25 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPD600N25N3 G Package PG-TO252-3 Marking 600N25N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 25 A D C T =100C 18 C 2) I T =25C 100 Pulsed drain current D,pulse C E I =25A, R =25W Avalanche energy, single pulse 210 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s Gate source voltage V 20 V GS Power dissipation P T =25C 136 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.3 page 1 2011-07-14IPD600N25N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.1 K/W thJC R minimal footprint - - 75 thJA Thermal resistance, junction - ambient 3) - - 50 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =25A - 51 60 m W DS(on) GS D R Gate resistance - 2.5 - W G V >2 I R , DS D DS(on)max g Transconductance 24 47 - S fs I =25A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-07-14