MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPD65R420CFDA Data Sheet Rev. 2.1 Final Automotive650V CoolMOS CFDA Power Transistor IPD65R420CFDA DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS CFDA series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and 2 1 conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and 3 cooler. Features Drain Pin 2 Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Gate Easy to use/drive Pin 1 Qualified according to AEC Q101 Source Green package (RoHS compliant), Pb-free plating, halogen free for mold Pin 3 compound Applications 650V CoolMOS CFDA is designed for switching applications. Table 1 Key Performance Parameters Parameter Value Unit VDS 650 V RDS(on),max 0.42 Qg,typ 90 nC ID,pulse 80 A Eoss 400V 2.8 J Body diode di/dt 500 A/s Qrr 0.7 C trr 140 ns Irrm 8.8 A Type / Ordering Code Package Marking Related Links IPD65R420CFDA PG-TO 252 65F420A - Final Data Sheet 2 Rev. 2.1, 2015-02-11