X-On Electronics has gained recognition as a prominent supplier of IPDD60R125G7XTMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPDD60R125G7XTMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPDD60R125G7XTMA1 Infineon

IPDD60R125G7XTMA1 electronic component of Infineon
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Part No.IPDD60R125G7XTMA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; CoolMOS™ G7; unipolar; 600V; 20A; Idm:54A
Datasheet: IPDD60R125G7XTMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1700: USD 2.3283 ea
Line Total: USD 3958.11 
Availability - 1649
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1700  Multiples: 1700
Pack Size: 1700
Availability Price Quantity
1649
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1700
Multiples : 1700
1700 : USD 2.3283

2
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 2.3517

46
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 6.216
5 : USD 4.326
12 : USD 4.088

   
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Technology
Polarisation
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Kind Of Package
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Drain-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the IPDD60R125G7XTMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPDD60R125G7XTMA1 and other electronic components in the MOSFETs category and beyond.

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IPDD60R125G7 MOSFET PG-HDSOP-10-1 600V CoolMOS G7 SJ Power Device The C7 GOLD series (G7) for the first time brings together the benefits of 10 the C7 GOLD CoolMOS technology, 4 pin Kelvin Source capability and 6 the improved thermal properties of the DDPAK package to enable a tab possible SMD solution for high current topologies such as PFC up to 3kW. Pin 1 5 Features C7 Gold gives best in class FOM R *E and R *Q . DS(on) oss DS(on) g Suitable for hard and soft switching (PFC and high performance LLC) C7 Gold technology enables best in class RDS(on) in smallest footprint. th DDPAK package has inbuilt 4 pin Kelvin Source configuration and low parasitic source inductance (~3nH). DDPAK package is MSL1 compliant, total Pb-free and has easy visual Drain Pin 6-10, Tab inspection leads. DDPAK SMD package combined with lead free die attach process enables improved thermal performance (R th). *1 Gate Pin 1 Driver Source Benefits Power Pin 2 Source Pin 3,4,5 C7 Gold FOM RDS(on)*Qg is 15% better than previous C7 600V enabling *1: Internal body diode faster switching leading to higher efficiency. Possibility to increasse economies of scales by usage in PFC and PWM topologies in the application. 2 C7 Gold can reach 50m in DDPAK 115mm footprint, whereas previous 2 2 BIC C7 600V was 40m in 150mm D PAK footprint. Reducing parasitic source inductance by Kelvin Source improves efficiency by faster switching and ease of use due to less ringing. DDPAK package is easy to use and has the highest quality standards. Improved thermals enable SMD DDPAK package to be used in higher current designs than has been previously possible. Potential applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 125 m Q 27 nC g,typ I 54 A D,pulse I T<150C 27 A D,continuous j E 400V 3.27 J oss Body diode di/dt 720 A/s Type / Ordering Code Package Marking Related Links IPDD60R125G7 PG-HDSOP-10 60R125G7 see Appendix A Final Data Sheet 1 Rev. 2.1, 2020-10-27600V CoolMOS G7 SJ Power Device IPDD60R125G7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2020-10-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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