IPI50R399CPXKSA2 Infineon

IPI50R399CPXKSA2 electronic component of Infineon
IPI50R399CPXKSA2 Infineon
IPI50R399CPXKSA2 MOSFETs
IPI50R399CPXKSA2  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPI50R399CPXKSA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPI50R399CPXKSA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPI50R399CPXKSA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 9A; 83W; PG-TO262-3
Datasheet: IPI50R399CPXKSA2 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.3821
10$ 1.2227
100$ 1.0544
250$ 0.9629
500$ 0.9132
1000$ 0.8117
2500$ 0.8027
5000$ 0.7859
10000$ 0.7749
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.5917
3$ 2.2389
10$ 1.7912
11$ 1.4791
30$ 1.3977
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
On-State Resistance
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPI50R399CPXKSA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPI50R399CPXKSA2 and other electronic components in the MOSFETs category and beyond.

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IPI50R399CP TM CoolMOS Power Transistor Product Summary Features V 8M ./) O 0 Ri V )DL: HI ><JG: D B : G>I / M . , + X R ) ,22 = % Ri V 2 AIG6 ADL <6I: 8=6G<: Q *0 < X%eja V MIG: B : 9K 9I G6I: 9 V % ><= E: 6 8JGG: CI 86E67>A>IN V -7 G: : A: 69 EA6I>C< / D% 0 8DB EA>6CI I &MH+/+ * V . J6A) >: 9 688DG9>C< ID CoolMOS CP is designed for: V % 6G9 6C9 HD IHL>I8=>C< 0* -0 DG H: GK: G EDL: G HJEEA>: H V * - DG )6B E 6AA6HI V -4 * 0I6<: H )6B E 6AA6HI ) 6C9 - - 13 Type Package Marking BIB.)K,22<I I &MH+/+ .K,22I Maximum ratings, 6I T Y JCA: HH DI=: GL>H: HE: 8> >: 9 Parameter Symbol Conditions Value Unit DCI>CJDJH 9G6>C 8JGG: CI I T Y 2 9 = < T Y / < + I T Y +) -JAH: 9 9G6>C 8JGG: CI =%af dV < K6A6C8=: : C: G<N H>C<A: EJAH: E I V 3 +*. C 9L = == + %, E I V 3 ) ,, K6A6C8=: : C: G<N G: E: I>I>K: t 9K = == 9K + %, I , , 9 K6A6C8=: 8JGG: CI G: E: I>I>K: t 9K 9K * , 0 1 9v (Ut GJ<<: 9C: HH 9v (Ut V 3 .) O( d =L 6I: HDJG8: KDAI6<: V deReZT v+) O L % O v,) -DL: G 9>HH>E6I>DC P T Y 1, P e e < T T , E: G6I>C< 6C9 HIDG6<: I: B E: G6IJG: u< deX * DJCI>C< IDGFJ: * 6C9 * H8G: LH + 8B / : K E6<: IPI50R399CP Maximum ratings, 6I T Y JCA: HH DI=: GL>H: HE: 8> >: 9 Parameter Symbol Conditions Value Unit I DCI>CJDJH 9>D9: DGL6G9 8JGG: CI - 2 9 L T Y < + I +) >D9: EJAH: 8JGG: CI L%af dV - Uv (Ut *. O( d / : K: GH: 9>D9: 9v (Ut Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R 1=: GB 6A G: H>HI6C8: JC8I>DC 86H: & & * . D(P eYC< 1=: GB 6A G: H>HI6C8: JC8I>DC R VRUVU & & /+ eYC9 R SZV e 0DA9: G>C< I: B E: G6IJG: B B >C T & & +/) u< d U L6K: HDA9: G>C< DCAN 6AADL: 9 6I A: 69H GDB 86H: DG H Electrical characteristics, 6I T Y JCA: HH DI=: GL>H: HE: 8> >: 9 Static characteristics V V 3 I G6>C HDJG8: 7G: 6 9DLC KDAI6<: .)) & & O K =LL L = 6I: I=G: H=DA9 KDAI6<: V V 6V I B + . , , . eY =L L = V 3 V 3 =L L 5: GD <6I: KDAI6<: 9G6>C 8JGG: CI I & & * w9 =LL T Y V 3 V 3 =L L & *) & T Y 6I: HDJG8: A: 6 6<: 8JGG: CI I V 3 V 3 & & *)) 9 LL L =L V 3 I L = R G6>C HDJG8: DC HI6I: G: H>HI6C8: & ) ,/ ) ,22 = T Y V 3 I L = & ) 2) & T Y R 6I: G: H>HI6C8: f * % O DE: C 9G6>C / : K E6<:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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