Product Information

IPL60R065C7AUMA1

IPL60R065C7AUMA1 electronic component of Infineon

Datasheet
MOSFET HIGH POWER_NEW
Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.3834 ea
Line Total: USD 6.38

2812 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2804 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 6.3241
10 : USD 5.7901
25 : USD 5.6834
100 : USD 5.1494
500 : USD 5.0783
1000 : USD 4.9834

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Additional Infomation About Product

IPL60R065C7 MOSFET ThinPAK 8x8 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with R *A below 1Ohm*mm. DS(on) Features Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Drain Pin 5 Increased efficiency due to best in class FOM R *E and R *Q DS(on) oss DS(on) g Best in class R /package DS(on) SMD package with very low parasitic inductance for easy device control Gate Pin 1 Qualified for industrial grade applications according to JEDEC (J-STD20 Driver Source and JESD22) Power Pin 2 Source 4pin kelvin source concept Pin 3,4 Benefits Increased economies of scale by use in PFC and PWM topologies in the application Higher dv/dt limit enables faster switching leading to higher efficiency Enabling higher system efficiency by lower switching losses Increased power density solutions due to smaller packages Optimized PCB assembly and layout solutions Suitable for applications such as server, telecom and solar Up to 0.5% better full load efficiency 100kHz compared to conventional 3pin package Potential applications PFC stages and PWM stages (TTF, LLC) for high power/performance SMPS e.g. Computing, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 65 m DS(on),max Q 68 nC g,typ I 135 A D,pulse ID,continuous Tj<150C 51 A E 400V 8.1 J oss Body diode di /dt 370 A/s F Type / Ordering Code Package Marking Related Links IPL60R065C7 PG-VSON-4 60C7065 see Appendix A Final Data Sheet 1 Rev. 2.1, 2017-08-30600V CoolMOS C7 Power Transistor IPL60R065C7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2017-08-30

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Infineon may also be referenced as

CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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