IPN60R2K1CE MOSFET PG-SOT223 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for standard grade applications Gate Pin 1 Applications Source Pin 3 Adapter, Charger and Lighting Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V T 650 V DS j,max R 2.1 DS(on),max Qg,typ 6.7 nC ID,pulse 5.9 A E 400V 0.76 J oss Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPN60R2K1CE PG-SOT223 60S2K1 see Appendix A Final Data Sheet 1 Rev. 2.0, 2016-04-29600V CoolMOS CE Power Transistor IPN60R2K1CE Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 4 Electrical characteristics diagrams . 6 Test Circuits . 10 Package Outlines . 11 Appendix A 12 Revision History 13 Trademarks . 13 Disclaimer 13 Final Data Sheet 2 Rev. 2.0, 2016-04-29