X-On Electronics has gained recognition as a prominent supplier of IPP200N25N3GXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP200N25N3GXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPP200N25N3GXKSA1 Infineon

IPP200N25N3GXKSA1 electronic component of Infineon
IPP200N25N3GXKSA1 Infineon
IPP200N25N3GXKSA1 MOSFETs
IPP200N25N3GXKSA1  Semiconductors

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See Product Specifications
Part No. IPP200N25N3GXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3
Datasheet: IPP200N25N3GXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.55 ea
Line Total: USD 6.55 
Availability - 576
Ship by Tue. 10 Jun to Thu. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
485
Ship by Thu. 12 Jun to Wed. 18 Jun
MOQ : 100
Multiples : 50
100 : USD 3.575
150 : USD 3.523
250 : USD 3.375
750 : USD 3.325
1250 : USD 3.2875

576
Ship by Tue. 10 Jun to Thu. 12 Jun
MOQ : 1
Multiples : 1
1 : USD 6.55
25 : USD 3.443
100 : USD 3.399
500 : USD 3.179
2500 : USD 3.168

2546
Ship by Thu. 12 Jun to Wed. 18 Jun
MOQ : 33
Multiples : 1
33 : USD 7.9698
34 : USD 7.7876
57 : USD 4.5884
60 : USD 4.3871
100 : USD 3.6926

1262
Ship by Thu. 12 Jun to Wed. 18 Jun
MOQ : 35
Multiples : 1
35 : USD 7.449
42 : USD 6.253
50 : USD 5.577
1000 : USD 5.3375

711010
Ship by Thu. 12 Jun to Wed. 18 Jun
MOQ : 500
Multiples : 500
500 : USD 4.4905

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPP200N25N3GXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP200N25N3GXKSA1 and other electronic components in the MOSFETs category and beyond.

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IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 250 V DS N-channel, normal level R 20 mW DS(on),max Excellent gate charge x R product (FOM) DS(on) I 64 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Package PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 200N25N 200N25N 200N25N Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25C Continuous drain current 64 A D C T =100C 50 C 2) I T =25C 256 Pulsed drain current D,pulse C E Avalanche energy, single pulse I =47A, R =25W 320 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/s Gate source voltage V 20 V GS P T =25C Power dissipation 300 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) See figure 3 Rev. 2.5 page 1 2017-03-31IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 0.5 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 3) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I =1mA Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =270A 2 3 4 GS(th) DS GS D V =200V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =200V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =64A - 17.5 20 mW DS(on) GS D R Gate resistance - 2.4 - W G V >2 I R , DS D DS(on)max g Transconductance 61 122 - S fs I =64A D 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.5 page 2 2017-03-31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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