MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOSC7
600VCoolMOSC7PowerTransistor
IPP60R180C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket600VCoolMOSC7PowerTransistor
IPP60R180C7
TO-220
1Description
CoolMOSC7isarevolutionarytechnologyforhighvoltagepower
tab
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOSC7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithR *Abelow1Ohm*mm.
DS(on)
Features
Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
IncreasedMOSFETdv/dtruggednessto120V/ns
Drain
IncreasedefficiencyduetobestinclassFOMR *E andR *Q Pin 2, Tab
DS(on) oss DS(on) g
BestinclassRDS(on)/package
QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
Gate
andJESD22)
Pin 1
Source
Pin 3
Benefits
IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
Enablinghighersystemefficiencybylowerswitchinglosses
Increasedpowerdensitysolutionsduetosmallerpackages
Suitableforapplicationssuchasserver,telecomandsolar
Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
R 180 m
DS(on),max
Q 24 nC
g.typ
I 45 A
D,pulse
I @ T<150C 22 A
D,continuous j
E @400V 2.7 J
oss
Body diode di/dt 350 A/s
Type/OrderingCode Package Marking RelatedLinks
IPP60R180C7 PG-TO 220 60C7180 see Appendix A
Final Data Sheet 2 Rev.2.0,2015-05-08