IPP60R360CFD7XKSA1 Infineon

IPP60R360CFD7XKSA1 electronic component of Infineon
IPP60R360CFD7XKSA1 Infineon
IPP60R360CFD7XKSA1 MOSFETs
IPP60R360CFD7XKSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of IPP60R360CFD7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPP60R360CFD7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. IPP60R360CFD7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET LOW POWER_NEW
Datasheet: IPP60R360CFD7XKSA1 Datasheet (PDF)
Price (USD)
1: USD 2.125 ea
Line Total: USD 2.12 
Availability : 326
  
Ship by Wed. 10 Sep to Fri. 12 Sep
QtyUnit Price
1$ 2.125
10$ 1.728
100$ 1.309
500$ 0.9955
1000$ 0.8954
2500$ 0.8151
5000$ 0.8052

Availability 326
Ship by Wed. 10 Sep to Fri. 12 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.125
10$ 1.728
100$ 1.309
500$ 0.9955
1000$ 0.8954
2500$ 0.8151
5000$ 0.8052

   
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We are delighted to provide the IPP60R360CFD7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPP60R360CFD7XKSA1 and other electronic components in the MOSFETs category and beyond.

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Product brief 600 V CoolMOS CFD7 SJ MOSFET Infineons answer to resonant high-power topologies The 600 V CoolMOS CFD7 is Infineons latest high voltage superjunction MOSFET Key features technology with integrated fast body diode, completing the CoolMOS 7 series. It is the Ultrafast body diode ideal choice for resonant topologies in high power SMPS applications, such as server, Best-in-class reverse recovery telecom and EV charging stations. charge (Q ) rr Improved reverse diode dv/dt and The new CoolMOS CFD7 is the successor to the CoolMOS CFD2 family. CoolMOS CFD7 dif/dt ruggedness comes with reduced gate charge (Q ), improved turn-off behavior and a reverse recovery g Lowest FOM R x Q and E DS(on) g oss charge (Q ) of up to 69 percent lower compared to the competition, as well as the lowest rr Best-in-class R /package DS(on) reverse recovery time (t ) in the market. Due to these features CoolMOS CFD7 offers combinations rr highest efficiency and best-in-class reliability in soft switching topologies such as LLC and ZVS phase-shift full-bridge. In addition, CoolMOS CFD7 enables higher power density thanks to its optimized R . DS(on) Key benefits All together, this latest fast body diode series brings clear benefits compared to competitor Best-in-class hard commutation offerings by combining the advantages of a fast switching technology with superior ruggedness commutation ruggedness without sacrificing easy implementation in the design-in process. Highest reliability for resonant topologies Q comparison of 170 m CFD vs. 190 m range competition* Q comparison of 170 m CFD vs. 190 m range competition* Highest efficiency with outstanding rr rr ease-of-use/performance trade-off 1200 Enabling increased power density solutions 1000 -69 % 800 Worlds best Q got even better rr 600 -32 % 400 200 0 Comp. C Comp. A Comp. D Comp. B CFD2 CFD7 *Comparison b*Comparison ased on dabased on datasheetat vsheet valuesalues www.infineon.com/cfd7 Q nC rrProduct brief 600 V CoolMOS CFD7 SJ MOSFET Infineons answer to resonant high power topologies The application measurements shown below illustrate that the features of the latest CoolMOS CFD7 family result in significant efficiency improvements in resonant switching topologies. CoolMOS CFD7 offers up to 1.45 percent increased energy efficiency over the main competition on the market and exceeds the requirements of the targeted applications. E iciency comparison of CFD7 vs. CFD2 and competition in 2 kW ZVS E iciency comparison of CFD7 vs. CFD2 and competition in 3 kW LLC 1 0.8 IPW60R070CFD7 0.7 0.8 IPW65R080CFD 0.6 0.6 Competitor A 0.5 0.4 0.4 Competitor B 0.2 0.3 Competitor C 0.79% 1.45% 0.17% 0 0.2 Competitor D 0.1 -0.2 0.22% 0 -0.4 -0.1 -0.6 -0.2 -0.8 -0.3 0 10 20 30 40 0 5 10 15 20 25 30 Load current A Load current A 600 V CoolMOS CFD7 product portfolio R TO-263 DPAK TO-252 DPAK ThinPAK 8x8 TO-220 TO-220 FullPAK TO-247 TOLL DDPAK QDPAK DS(on) max. m IPB60R360CFD7 IPD60R360CFD7 IPP60R360CFD7 IPA60R360CFD7 360 280 IPB60R280CFD7 IPD60R280CFD7 IPP60R280CFD7 IPA60R280CFD7 IPB60R210CFD7 IPD60R210CFD7 IPL60R225CFD7 IPP60R210CFD7 IPA60R210CFD7 210/215 170/185 IPB60R170CFD7 IPD60R170CFD7 IPL60R185CFD7 IPP60R170CFD7 IPA60R170CFD7 IPW60R170CFD7 IPDD60R170CFD7 IPB60R145CFD7 IPD60R145CFD7 IPL60R160CFD7 IPP60R145CFD7 IPA60R145CFD7 IPW60R145CFD7 IPT60R145CFD7 IPDD60R145CFD7 145/160 IPB60R125CFD7 IPL60R140CFD7 IPP60R125CFD7 IPA60R125CFD7 IPW60R125CFD7 IPT60R125CFD7 IPDD60R125CFD7 125/140 IPB60R105CFD7 IPL60R115CFD7 IPP60R105CFD7 IPW60R105CFD7 IPT60R105CFD7 IPDD60R105CFD7 105/115 IPB60R090CFD7 IPL60R095CFD7 IPP60R090CFD7 IPW60R090CFD7 IPT60R090CFD7 IPDD60R090CFD7 90/95 IPB60R070CFD7 IPL60R075CFD7 IPP60R070CFD7 IPW60R070CFD7 IPT60R075CFD7 IPDD60R075CFD7 IPDQ60R075CFD7* 70/75 IPB60R055CFD7 IPL60R060CFD7 IPW60R055CFD7 IPT60R055CFD7 IPDD60R055CFD7 IPDQ60R055CFD7* 55/60 40/45 IPB60R040CFD7 IPW60R040CFD7 IPT60R045CFD7 IPDD60R045CFD7 IPDQ60R045CFD7* IPW60R031CFD7 IPT60R035CFD7 IPDQ60R035CFD7* 31/35 24/26 IPW60R024CFD7 IPDQ60R025CFD7* IPW60R018CFD7 IPDQ60R020CFD7* 18/20 IPDQ60R015CFD7* 15 * Coming soon By combining the 600 V CoolMOS CFD7 with the 2EDN EiceDRIVER family, Infineon enables optimized system solutions for high-power designs. For more information visit: www.infineon.com/edn Published by Please note Additional information Infineon Technologies Austria AG THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND For further information on technologies, our products, the 9500 Villach, Austria ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE application of our products, delivery terms and conditions REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF and/or prices, please contact your nearest Infineon Technologies 2020 Infineon Technologies AG. ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR office (www.infineon.com). All Rights Reserved. PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR Warnings PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT Due to technical requirements, our products may contain PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND dangerous substances. For information on the types in question, THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE please contact your nearest Infineon Technologies office. THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION. Except as otherwise explicitly approved by us in a written document signed by authorized representatives of Infineon WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR Technologies, our products may not be used in any life- THE INFORMATION GIVEN HEREIN AT ANY TIME. endangering applications, including but not limited to medical, nuclear, military, life-critical or any other applications where a Document number: B152-I1104-V1-7600-EU-EC-P failure of the product or any consequences of the use thereof can Date: 11 / 2020 result in personal injury. E iciency % E iciency %

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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