MOSFET Metal Oxide Semiconductor Field Effect Transistor CFDA Automotive 650V CoolMOS CFDA Power Transistor IPx65R660CFDA Data Sheet Rev. 2.1 Final Automotive650V CoolMOS CFDA Power Transistor IPB65R660CFDA, IPP65R660CFDA DPAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. 650V CoolMOS CFDA series 1 3 combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and Drain conduction losses together with highest robustness make especially Pin 2 resonant switching applications more reliable, more efficient, lighter, and cooler. Gate Pin 1 Features Source Pin 3 Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Easy to use/drive Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free plating, halogen free for mold compound Applications 650V CoolMOS CFDA is designed for switching applications. Table 1 Key Performance Parameters Parameter Value Unit VDS 650 V RDS(on),max 0.66 Qg,typ 20 nC ID,pulse 17 A Eoss 400V 1.8 J Body diode di/dt 900 A/s Qrr 0.2 C trr 65 ns Irrm 4.5 A Type / Ordering Code Package Marking Related Links IPB65R660CFDA PG-TO 263 65F660A - IPP65R660CFDA PG-TO 220 Final Data Sheet 2 Rev. 2.1, 2014-11-19