IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB70N10S3-12 PG-TO263-3-2 3N1012 IPI70N10S3-12 PG-TO262-3-1 3N1012 IPP70N10S3-12 PG-TO220-3-1 3N1012 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 70 A D C GS T =100 C, C 48 2) V =10 V GS 1) I T =25 C 280 Pulsed drain current D,pulse C 1) E I =35A 410 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse 70 A AS Gate source voltage V 20 V GS Power dissipation P T =25 C 125 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2008-02-12IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 1.2 K/W thJC Thermal resistance, junction - R -- 62 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =83A 2.0 3.0 4.0 GS(th) DS GS D V =80 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =80 V, V =0 V, DS GS - 1 100 2) T =125 C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS Drain-source on-state resistance R V =10V, I =70A - 9.7 11.6 m DS(on) GS D V =10V, I =70A, GS D - 9.4 11.3 SMD version Rev. 1.0 page 2 2008-02-12