IPB80N04S2L-03
IPP80N04S2L-03
OptiMOS Power-Transistor
Product Summary
Features
V 40 V
DS
N-channel Logic Level - Enhancement mode
R (SMD version) 3.1
m
DS(on),max
Automotive AEC Q101 qualified
I 80 A
D
MSL1 up to 260C peak reflow
175C operating temperature
PG-TO263-3-2 PG-TO220-3-1
Green package (lead free)
Ultra low Rds(on)
100% Avalanche tested
Type Package Ordering Code Marking
IPB80N04S2L-03 PG-TO263-3-2 SP0002-20158 2N04L03
IPP80N04S2L-03 PG-TO220-3-1 SP0002-19063 2N04L03
Maximum ratings, at T =25 C, unless otherwise specified
j
Value
Parameter Symbol Conditions Unit
1)
I T =25 C, V =10 V 80 A
Continuous drain current D C GS
T =100 C,
C
80
2)
V =10 V
GS
2)
I T =25 C
320
Pulsed drain current D,pulse C
2)
E I =80A
810 mJ
Avalanche energy, single pulse AS D
4)
V 20 V
Gate source voltage
GS
P T =25 C
Power dissipation 300 W
tot C
T , T
Operating and storage temperature -55 ... +175 C
j stg
Rev. 1.0 page 1 2006-03-02 IPB80N04S2L-03
IPP80N04S2L-03
Parameter Symbol Conditions Values Unit
min. typ. max.
2)
Thermal characteristics
Thermal resistance, junction - case R - - 0.5 K/W
thJC
Thermal resistance, junction -
R
-- 62
thJA
ambient, leaded
R
SMD version, device on PCB minimal footprint - - 62
thJA
2 5)
-- 40
6 cm cooling area
Electrical characteristics, at T =25 C, unless otherwise specified
j
Static characteristics
V V =0 V, I = 1 mA
Drain-source breakdown voltage 40 - - V
(BR)DSS GS D
V V =V , I =250 A
Gate threshold voltage 1.2 1.6 2.0
GS(th) DS GS D
V =40 V, V =0 V,
DS GS
I
Zero gate voltage drain current - 0.01 1 A
DSS
T =25 C
j
V =40 V, V =0 V,
DS GS
- 1 100
2)
T =125 C
j
Gate-source leakage current I V =20 V, V =0 V - 1 100 nA
GSS GS DS
R V =4.5 V, I =80 A
Drain-source on-state resistance - 3.6 4.5 m
DS(on) GS D
V =4.5 V, I =80 A,
GS D
- 3.3 4.2
SMD version
R V =10 V, I =80 A
Drain-source on-state resistance - 2.7 3.4 m
DS(on) GS D
V =10 V, I =80 A,
GS D
- 2.4 3.1
SMD version
Rev. 1.0 page 2 2006-03-02