IPS12CN10L G IPP12CN10L G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, logic level R 12 m W DS(on),max Excellent gate charge x R product (FOM) DS(on) I 69 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C Continuous drain current 69 A D C T =100C 49 C 2) I T =25C 276 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =69A, R =25W 150 mJ AS D GS I =69A, V =80V, D DS Reverse diode dv /dt dv /dt di /dt =100A/s, 6 kV/s T =175C j,max 3) V 20 V Gate source voltage GS Power dissipation P T =25C 125 W tot C T , T Operating and storage temperature -55 ... 175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 2) see figure 3 3) T =150C and duty cycle D=0.01 for V <-5V jmax gs Rev. 1.03 page 1 2011-09-05IPS12CN10L G IPP12CN10L G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics R Thermal resistance, junction - case - - 1.2 K/W thJC R minimal footprint - - 62 thJA Thermal resistance, junction - ambient 4) - - 40 6 cm2 cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =1mA 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =83A 1.2 1.84 2.4 GS(th) DS GS D V =80V, V =0V, DS GS Zero gate voltage drain current I - 0.1 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 100 T =125C j Gate-source leakage current I V =20V, V =0V - 1 100 nA GSS GS DS V =4.5V, I =34.5A, GS D Drain-source on-state resistance R - 11.7 15.8 m W DS(on) (TO220) V =10V, I =69A, GS D - 9.9 12 (TO220) V =4.5V, I =34.5A, GS D - 11.7 15.8 (TO251) V =10V, I =69A, GS D - 9.9 11.8 (TO251) R Gate resistance - 1.3 - W G V >2 I R , DS D DS(on)max g Transconductance 57 113 - S fs I =69A D 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.03 page 2 2011-09-05