IPS65R1K4C6 MOSFET IPAK SL 650V CoolMOS C6 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Drain Easy to use/drive Pin 2 Pb-free plating, Halogen free mold compound Qualified for industrial grade applications according to JEDEC (J-STD20 Gate and JESD22) Pin 1 Source Pin 3 Potential applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj max 700 V RDS(on),max 1.4 Qg,typ 10.5 nC ID,pulse 8.3 A Eoss 400V 1.15 J Body diode di/dt 500 A/s Type / Ordering Code Package Marking Related Links IPS65R1K4C6 PG-TO 251-3 65C61K4 see Appendix A Final Data Sheet 1 Rev. 2.1, 2017-07-25650V CoolMOS C6 Power Transistor IPS65R1K4C6 Table of Contents Description . 1 Table of Contents 2 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2017-07-25